Sanken Electric Co SDH02 Datasheet

SDH02

3

2

1

0

0.1 0.5 1 5 10 50 100

IC=2A

IC=1A

IC=0.5A

V

CE

(sat) (V)

IB (mA)

)

NPN Darlington
With built-in flywheel diode

External dimensions

E

• • •

SD

Absolute maximum ratings

(Ta=25°C)

Electrical characteristics

Symbol Ratings Unit

VCBO 120 V
VCEO 100 V
VEBO 6V

IC 1.5 A

ICP 2.5 (PW≤1ms, Du≤10%) A

IB 0.2 A
IF 1.5 A

IFSM 2.5 (PW≤0.5ms, Du≤10%) A

VR 120 V
PT 3 (Ta=25°C) W

Tj 150 °C

Tstg –40 to +150 °C

■Equivalent circuit diagram

16 15

1

1R2

R

2

R1: 2.5kΩ typ R2: 200Ω typ

14 13

3

5

4

12 11

6

10 9

7

8

●Diode for flyback voltage absorption

Symbol Unit Conditions

ICBO 10

Specification

min typ max

µ

AVCB=120V

IEBO 3mA VEB=6V

VCEO 100 V IC=10mA

hFE 2000 6000 12000 VCE=4V, IC=1A
VCE(sat) 1.1 1.3 V
VBE(sat) 1.7 2.2 V

ton 0.5

tstg 4.5

tf 1.2

µ

sVCC 30V,

µ

sIC=1A,

µ

sIB1=–IB2=2mA

IC=1A, IB=2mA

fT 50 MHz VCE=12V, IE=–0.1A

Cob 20 pF VCB=10V, f=1MHz

Symbol Unit Conditions

Specification

min typ max

VR 120 V IR=10µA
VF 1.6 V IF=1A

IR 10

µ

AVR=120V

trr 100 ns IF=±100mA

(Ta=25°C)

(Ta=25°C)

Characteristic curves

IC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) hFE-IC Temperature Characteristics (Typical)

2.5

IB=10mA

2.0

1.5

IC (A)

1.0

0.5

0

123456

CE(sat)-IC Temperature Characteristics (Typical) VCE(sat)-IB Characteristics (Typical) IC-VBE Temperature Characteristics (Typical)

V

3

2

(sat) (V)

CE

V

1

25°C

0

0.2 0.5 1 2.5

θ

j-a-PW Characteristics PT-Ta Characteristics Safe Operating Area (SOA)

50

10

(°C / W)

5

j–a

θ

1

51 10 100 500 100050

4mA

VCE (V)

–30°C

IC (A)

PW (mS)

2mA

75°C

1.2mA

Ta=125°C

0.6mA

0.4mA

0.3mA

(IC / IB=1000)

10000

5000

FE

1000

h

500

100

0.03 0.05 0.1 0.5 1 2.5

3

4
3

2

2

1

(W)

T

P

1

0

0

C

I

50 100 150

Ta (°C)

(A)

1-1 Chip Operation
2-2 Chip Operation
3-3 Chip Operation
4-4 Chip Operation

(VCE=4V)

typ

10000

5000

=125°C

a

75°C

T

1000

FE

h

500

100

0.03 0.05 0.1 0.5 1 2.5

2.5

2.0

1.5

IC (A)

1.0

0.5

0

0123

5

1

0.5

IC (A)

0.1

Single Pulse

0.05

Without Heatsink

a=25°C

T

0.03
3 5 10 50 100

IC (A)

=125°C

a

T

VBE (V)

VCE (V

(VCE=4V)

25°C

–30°C

CE=4V)

(V

75°C

25°C

–30°C

100µs

1ms

10ms

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