Sanken Electric Co SDC06 Datasheet
1000
500
100
0.03 0.05 0.1 0.5 1 3
IC (A)
(V
CE
=4V)
h
FE
Ta=125°C
75°C
25°C
–30°C
5
1
0.5
0.1
510 50
I
C
(A)
Single Pulse
Without Heatsink
Ta=25°C
1mS
NPN
SDC06
Absolute maximum ratings
With built-in avalanche diode
(Ta=25°C)
Electrical characteristics
Symbol Ratings Unit
VCBO 30 to 45 V
VCEO 30 to 45 V
VEBO 6V
IC 2A
ICP 3 (PW≤1ms, Du≤10%) A
IB 30 mA
PT 3 (Ta=25°C) W
Tj 150 °C
Tstg –40 to +150 °C
θ
j–a 41.6 °C/W
■Equivalent circuit diagram
15,16
1
R
B
RBE
2
13,14
3
R
B
RBE
4
11,12
5
R
B
7
RBE
6
9,10
R
B
RBE
8
External dimensions
E
(Ta=25°C)
Symbol Unit Conditions
ICBO 10
Specification
min typ max
µ
AVCB=30V
IEBO 1.2 2.8 mA VEB=6V
VCEO 30 45 V IC=10mA
hFE 400 700 2000 VCE=4V, IC=0.5A
VCE(sat)
0.2 V IC=0.5A, IB=5mA
0.6 V IC=1A, IB=5mA
VFEC 2.0 V IFEC=1A
ton 1.2
tstg 18.0
tf 3.6
µ
sVCC 10V,
µ
sIC=0.5A,
µ
sIB1=5mA, IB2=0A
fT 20 MHz VCE=12V, IE=–0.2A
Cob 50 pF VCB=10V, f=1MHz
ES/B 40 mJ L=10mH, Single pulse
• • •
SD
RB: 800Ω typ RBE: 2kΩ typ
Characteristic curves
IC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) hFE-IC Temperature Characteristics (Typical)
(A)
1-1 Chip Operation
2-2 Chip Operation
3-3 Chip Operation
4-4 Chip Operation
(VCE=4V)
typ
IC=1A
3
IB=30mA
12mA
2
(A)
C
I
1
0
01234 56
CE(sat)-IC Temperature Characteristics (Typical) VCE(sat)-IB Characteristics (Typical) IC-VBE Temperature Characteristics (Typical)
V
3
2
(sat) (V)
CE
V
1
0
0.2 0.5 1 3
θ
j-a-PW Characteristics PT-Ta Characteristics Safe Operating Area (SOA)
50
10
(°C / W)
5
j–a
θ
1
1 5 10 50 100 500 1000
VCE (V)
IC (A)
PW (mS)
8mA
5mA
3mA
2mA
1mA
(IC / IB=100)
Ta=125°C
75°C
25°C
–30°C
1000
500
FE
h
100
0.03 0.05 0.1 0.5 1 3
1
VCE (sat) (V)
IC=0.5A
0
1 5 10 30
3
4
3
2
2
1
(W)
T
P
1
0
0
I
C
IB (mA)
50 100 150
Ta (°C)
164
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