Sanken Electric Co SDC04 Datasheet
SDC04
)
2.5
2.0
1.5
1.0
0.5
0
012 3
V
BE
(V)
(V
CE
=4V)
I
C
(A)
T
a
=125°C
75°C
25°C
–30°C
5
1
0.5
0.1
0.05
0.03
3 5 10 50 100
I
C
(A)
VCE (V)
Single Pulse
Without Heatsink
T
a
=25°C
100µs
1ms
10ms
NPN Darlington
With built-in avalanche diode
External dimensions
E
• • •
SD
Absolute maximum ratings
(Ta=25°C)
Electrical characteristics
Symbol Ratings Unit
VCBO 100±15 V
VCEO 100±15 V
VEBO 6V
IC 1.5 A
ICP 2.5 (PW≤1ms, Du≤10%) A
IB 0.1 A
PT 3 (Ta=25°C) W
Tj 150 °C
Tstg –40 to +150 °C
θ
j–a 41.6 °C/W
■Equivalent circuit diagram
15,16
1
R1R
2
2
R1: 4kΩ typ R2: 150Ω typ
13,14
3
4
11,12
5
7
6
9,10
8
Symbol Unit Conditions
ICBO 10
Specification
min typ max
µ
AVCB=85V
IEBO 1 3 mA VEB=6V
VCEO 85 100 115 V IC=10mA
hFE 2000 5000 12000 VCE=4V, IC=1A
VCE(sat) 1.0 1.3 V
VBE(sat) 1.7 2.2 V
IC=1A, IB=2mA
VFEC 1.2 1.8 V IFEC=1A
ton 0.6
tstg 3.0
tf 1.0
µ
sVCC 30V,
µ
sIC=1A,
µ
sIB1=–IB2=2mA
fT 30 MHz VCE=12V, IE=–0.1A
Cob 20 pF VCB=10V, f=1MHz
(Ta=25°C)
Characteristic curves
IC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) hFE-IC Temperature Characteristics (Typical)
2.5
IB=5mA
1mA
2.0
1.5
(A)
C
I
1.0
0.5
0
0123456
CE(sat)-IC Temperature Characteristics (Typical) VCE(sat)-IB Characteristics (Typical) IC-VBE Temperature Characteristics (Typical)
V
2
1
(sat) (V)
CE
V
0
0.3 0.5 1 2.5
θ
j-a-PW Characteristics PT-Ta Characteristics Safe Operating Area (SOA)
50
10
(°C / W)
5
j–a
θ
1
1 5 10 50 100 500 1000
0.5mA
0.3mA
0.2mA
VCE (V)
IC (A)
PW (mS)
–30°C
25°C
C
/ IB=1000)
(I
Ta=125°C
75°C
20000
10000
5000
1000
hFE
500
100
50
0.03 0.05 0.1 0.5 1 2.5
3
2
(sat) (V)
CE
V
1
0
0.1 0.5 1 5 10 50 100
3
4
3
2
2
1
(W)
T
P
1
0
0
IC (A
IC-1A
IB (mA)
1-1 Chip Operation
2-2 Chip Operation
3-3 Chip Operation
4-4 Chip Operation
50 100 150
Ta (°C)
IC=2A
(VCE=4V)
typ
IC=4A
20000
10000
5000
=125°C
a
T
75°C
FE
1000
h
500
100
50
0.03 0.05 0.1 0.5 1 2.5
25°C
–30°C
IC (A)
(VCE=4V)
163
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