Sanken Electric Co SDC03 Datasheet
6
2.5
2.0
1.5
1.0
0.5
0
0123
I
C
(A)
VBE (V)
(V
CE
=4V)
T
a
=125°C
75°C
25°C
–30°C
)
NPN Darlington
SDC03
Absolute maximum ratings
With built-in avalanche diode
(Ta=25°C)
Electrical characteristics
Symbol Ratings Unit
VCBO 60±10 V
VCEO 60±10 V
VEBO 6V
IC 1.5 A
ICP 2.5 (PW≤1ms, Du≤10%) A
IB 0.1 A
PT 3 (Ta=25°C) W
Tj 150 °C
Tstg –40 to +150 °C
θ
j–a 41.6 °C/W
■Equivalent circuit diagram
15,16
1
R1R
2
13,14
3
11,12
5
7
9,10
External dimensions
Symbol Unit Conditions
ICBO 10
Specification
min typ max
µ
AVCB=50V
E
IEBO 1.1 3.5 mA VEB=6V
VCEO 50 60 70 V IC=10mA
hFE 2000 5000 12000 VCE=4V, IC=1A
VCE(sat) 1.2 1.4 V
VBE(sat) 1.8 2.2 V
IC=1A, IB=2mA
VFEC 1.3 1.8 V IFEC=1A
ton 0.5
tstg 4.0
tf 1.0
µ
sVCC 30V,
µ
sIC=1A,
µ
sIB1=–IB2=2mA
fT 50 MHz VCE=12V, IE=–0.1A
Cob 25 pF VCB=10V, f=1MHz
• • •
SD
(Ta=25°C)
2
4
6
8
R1: 3.5kΩ typ R2: 200Ω typ
Characteristic curves
IC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) hFE-IC Temperature Characteristics (Typical)
(V
CE
=4V)
IC=2A
(VCE=4V)
typ
10000
5000
=125°C
a
75°C
T
25°C
1000
FE
h
500
100
50
0.03 0.05 0.1 0.5 1 2.5
–30°C
IC (A)
2.5
IB=10mA
2mA
1mA
2.0
1.5
(A)
C
I
1.0
0.5
0
012345
CE(sat)-IC Temperature Characteristics (Typical) VCE(sat)-IB Characteristics (Typical) IC-VBE Temperature Characteristics (Typical)
V
3
2
(sat) (V)
CE
V
1
0.6mA
0.4mA
VCE (V)
0.3mA
–30°C
(IC / IB=1000)
Ta=125°C
75°C
25°C
10000
5000
1000
FE
h
500
100
50
0.03 0.05 0.1 0.5 1 2.5
3
2
(sat) (A)
CE
V
1
0.5A
IC (A)
1A
0
0.2 0.5 1 2.5
θ
j-a-PW Characteristics PT-Ta Characteristics Safe Operating Area (SOA)
50
10
5
θj–a (°C / W)
1
162
IC (A)
PW (mS)
0
0.1 0.5 1 5 10 50 100
3
4
3
2
2
1
(W)
T
P
1
0
1000500100501051
0
IB (mA)
1-1 Chip Operation
2-2 Chip Operation
3-3 Chip Operation
4-4 Chip Operation
50 100 150
Ta (°C)
5
1mS
1
(A)
0.5
C
I
Single Pulse
0.1
Without Heatsink
Ta=25°C
0.05
3 5 10 50 100
10mS
VCE (V
100µS
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