2000
1000
500
100
50
0.01 0.1 1 3
IC (A)
(V
CE
=4V)
h
FE
NPN
SDC01
Absolute maximum ratings
General purpose
(Ta=25°C)
Electrical characteristics
Symbol Ratings Unit
VCBO 80 V
VCEO 50 V
VEBO 6V
IC 2A
ICP 3 (PW≤1ms, Du≤10%) A
IB 0.5 A
PT 3 (Ta=25°C) W
Tj 150 °C
Tstg –40 to +150 °C
θ
j–a 41.6 °C/W
■Equivalent circuit diagram
9,1011,1213,1415,16
1357
External dimensions
Symbol Unit Conditions
ICBO 10
ICES 100
IEBO 10
Specification
min typ max
µ
AVCB=80V
µ
AVCES=50V
µ
AVEB=6V
E
VCEO 50 V IC=10mA
hFE 500 2000 VCE=4V, IC=0.5A
VCE(sat) 0.4 V
VBE(sat) 1.1 V
IC=0.5A, IB=5mA
fT 40 MHz VCE=12V, IE=–0.1A
• • •
SD
(Ta=25°C)
Characteristic curves
IC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) hFE-IC Temperature Characteristics (Typical)
IB=100mA
1.8
1.6
1.4
1.2
1.0
(A)
C
I
0.8
0.6
0.4
0.2
0
CE(sat)-IC Temperature Characteristics (Typical) VCE(sat)-IB Temperature Characteristics (Typical) IC-VBE Temperature Characteristics (Typical)
V
1.5
1.0
(sat) (V)
CE
V
0.5
0
0.05 0.1 0.5 1
50
10
(°C / W)
j–a
θ
1
0.5
0.1 1 10 100 1000
8642
2000
30mA
10mA
5mA
3mA
2mA
1mA
10 23456
VCE (V)
(IC / IB=500)
Ta=125°C
75°C
25°C
–30°C
IC (A)
θ
j-a-PW Characteristics PT-Ta Characteristics Safe Operating Area (SOA)
PW (mS)
1.5
1.0
Ta=125°C
(sat) (V)
CE
V
0.5
0
0.5 1 10 100
3
4
3
2
2
1
(W)
T
P
1
0
0
75°C
25°C
–30°C
IB (mA)
50 100 150
Ta (°C)
(IC=0.5A)
1-1 Chip Operation
2-2 Chip Operation
3-3 Chip Operation
4-4 Chip Operation
1000
500
FE
h
100
50
0.01 0.1 1 3
1.8
1.6
1.4
1.2
1.0
(A)
C
I
0.8
0.6
0.4
0.2
0
0 0.5 1.0 1.5
5
1
(A)
C
I
Single Pulse
Without Heatsink
0.1
a
=25°C
T
0.05
25°C
–30°C
=125°C
a
T
Ta=125°C
IC (A)
75°C
25°C
–30°C
VBE (V)
VCE (V)
75°C
10ms
(V
100µs
1ms
(VCE=4V)
CE
=4V)
100101
161