SDA01
PNP Darlington
General purpose
External dimensions
E
• • •
SD
Absolute maximum ratings
Symbol Ratings Unit
VCBO –60 V
VCEO –60 V
VEBO –6 V
IC –1.5 A
ICP –2.5 (PW≤1ms, Du≤10%) A
IB –0.1 A
PT 3 (Ta=25°C) W
Tj 150 °C
Tstg –40 to +150 °C
θ
j–a 41.6 °C/W
■Equivalent circuit diagram
24 6 8
R1R2
1
R1: 4kΩ typ R2: 100Ω typ
35 7
15,16 13,14 11,12 9,10
(Ta=25°C)
Electrical characteristics
Symbol Unit Conditions
ICBO –10
IEBO –3 mA VEB=–6V
VCEO –60 V IC=–10mA
hFE 2000 12000 VCE=–4V, IC=–1A
VCE(sat) –1.4 V
VBE(sat) –2.2 V
Specification
min typ max
µ
AVCB=–60V
IC=–1A, IB=–2mA
(Ta=25°C)
Characteristic curves
IC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) hFE-IC Temperature Characteristics (Typical)
25°C
BE
–30°C
a
T
=125°C
(V)
75°C
10ms
25°C
(VCE=–4V)
(VCE=–4V)
–30°C
100µs
1ms
I
C
=–1A
C
=–0.5A
I
1-1 Chip Operation
2-2 Chip Operation
3-3 Chip Operation
4-4 Chip Operation
(VCE=–4V)
typ
IC=–2A
10000
5000
=125°C
a
75°C
–0.05
Single Pulse
Without Heatsink
a
=25°C
T
T
IC (A)
V
VCE (V)
1000
FE
h
500
100
50
–0.03 –0.1 –0.5 –1 –2.5
–2.5
–2.0
–1.5
(A)
C
I
–1.0
–0.5
0
0 –1–2–3
–5
–1
–0.5
(A)
C
I
–0.1
–0.05
–3 –5 –10 –50 –100
–2.5
IB=–5mA
–2.0
–1.5
(A)
C
I
–1.0
–0.5
0
CE(sat)-IC Temperature Characteristics (Typical) VCE(sat)-IB Characteristics (Typical) IC-VBE Temperature Characteristics (Typical)
V
–3
–2
(sat) (V)
CE
V
–1
0
–0.2 –0.5 –1 –2.5
50
10
(°C / W)
5
j–a
θ
1
1 5 10 50 100 500 1000
–1.2mA
–2mA
–1.0mA
–0.8mA
–0.6mA
–0.5mA
–0.4mA
–0.3mA
C
/ IB=1000)
Ta=125°C
–6–5–4–3–2–10
VCE (V)
(I
–30°C
25°C
75°C
IC (A)
θ
j-a-PW Characteristics PT-Ta Characteristics Safe Operating Area (SOA)
PW (mS)
10000
5000
1000
FE
h
500
100
50
–0.03 –0.05 –0.1 –0.5 –1 –2.5
–3
–2
(sat) (V)
CE
V
–1
0
–0.1 –0.5 –1 –5 –10 –50
3
4
3
2
2
1
(W)
T
P
1
0
0
IC (A)
IB (mA)
50 100 150
Ta (°C)
159