Sanken Electric Co SAP08N Datasheet
Darlington transistors with
built-in temperature compensation diodes
for audio amplifier applications
SAP
series
Features
●Built-in temperature compensation diodes and one emitter resistor
●Real time temperature compensation
The temperature compensation diodes are mounted on one chip and placed in the center of the chip to
detect temperature rises directly.
●Elimination of the temperature dependency of the idling current
The temperature coefficient of the diodes is optimized to have the idling current stabilized; thus one of
the fatal failure modes in conventional Darlington transistors, Thermal Runaway, is avoidable.
●Symmetrical design for the PNP and the NPN pinouts
The new design minimizes the length of the pattern layout, and output distortions are controlled.
●Darlington transistors, temperature compensation diodes and one emitter resistor are
incorporated in one package, so labor for parts insertion as well as the parts count is
reduced.
Line up
Part Number
PC (W) VCEO (V) IC (A)
h
FE
Emitter resistor (Ω)
SAP15P/SAP15N
SAP10P/SAP10N
SAP08P/SAP08N
■
External Dimentions (Unit : mm)
±
0.2
3.2
±
0.3
15.4
±
0.2
9.9
0.2
2.54
3.81
±
3.3
(36°)
3.4max
±
±
a
b
(2.5)
0.1
0.1
➀➁ ➂ ➃➄
(7.62)
(12.7)
17.8
±
0.3
±
0.1
4
1.35
0.65
0.8
2.54
3.81
0.2
±
0.2
±
7
0.3
0.3
±
±
22
+0.2
–0.1
+0.2
–0.1
+0.2
–0.1
±
0.1
±
0.1
150
100
80
4.5
5
0.3
±
28
23
(18)
1.6
±
0.1
1
0.65
Weight: approx 8.3g
a. Part Number
b. Lot Number
160
150
150
±
0.2
±
0.2
0.1
±
2
(41)
+0.2
–0.1
15
12
10
■
Equivalent Circuit Diagram
NPN PNP
B
D
5000 to 20000
5000 to 20000
5000 to 20000
C
R: 70Ω Typ.
E
BD SCE
S
Emitter resistor
RE: 0.22Ω Typ.
B
D
R:70Ω Typ.
ES DCB
0.22
0.22
0.22
E
Emitter resistor
RE: 0.22Ω Typ.
C
S
Application Information
1. Recommended Operating Conditions
Add a variable resistor (VR) between diode terminals to adjust the idling current. The
➀
resistor having 0 to 200Ω is to be used.
Adjust the forward current flowing over the diodes at 2.5mA.
➁
Adjust the idling current at 40mA with the external variable resistor.
➂
Both the temperature coefficients for the transistor and the diodes are matched under the above conditions.
Both the PNP and the NPN are Darlington transistors, so the temperature change ratio of the total four VBE
of the transistors is subject to the compensation. One PN junction diode in the NPN and five Schottky
barrier diodes in the PNP are built-in, and the total six diodes are operating as the temperature compensation.
The temperature coefficient of the total diodes (its variable value) becomes smaller with a larger forward
current (approximately – 0.2mV/°C to 1mA), and the coefficient of the total transistors (its variable value)
also becomes smaller with a larger idling current (approximately –0.1mV/°C to 10mA), but the both variable
values are small.
Thus, the distortion of the temperature coefficient caused by the different current is small, so the thermal
runaway may not be occurred due to the changes of the recommended ratings; however, the actual operation
is to be confirmed by using an experimental equipment or board.
+V
CC
NPN
B
D
2.5mA
D
External variable
resistor (VR)
(0 to 200Ω)
C
S
40mA
E
E
S
B
PNP
C
–V
CC
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