Sanken Electric Co SAH03 Datasheet
163
SAH03
Silicon PNP Epitaxial Planar Transistor with Fast-Recovery Rectifier Diode
Symbol
V
CBO
VCEO
VEBO
IC
IB
PC
Tj
T
stg
SAH03
–60
–60
–6
–1.2
–0.1
1.0(Ta=25°C)
150
–40to+150
Unit
V
V
V
A
A
W
°C
°C
■
Absolute maximum ratings
■
Electrical Characteristics
Symbol
I
CBO
IEBO
V(BR)CEO
hFE
VCE(sat)
fT
COB
SAH03
–
10max
–
3max
–
60min
2000to12000
–
1.4max
100typ
30typ
Unit
µ
A
mA
V
V
MHz
pF
Conditions
V
CB=–60V
V
EB=–6V
I
C=–10mA
VCE=–4V, IC=–1A
I
C=–1A, IB=–2mA
V
CE=–12V, IE=0.1A
V
CB=–10V, f=1MHz
(Ta=25°C)
(Ta=25°C)
Equivalent
circuit
VR IR=100
µ
A 100 min V
VF IF=0.5A 1.5 max V
t r r IF=±100mA 100 typ ns
External Dimensions PS Pack
2.54
±0.25
1.4
±0.2
3.6
±0.2
6.3
±0.2
8.0
±0.5
1.0
±0.3
3.0
±0.2
9.8
±0.3
0~0.1
0.25
4.32
±0.2
0.89
±0.15
4.8
max
6.8
max
4.0
max
ab
1
2
3
4
0.75
+0.15
-0.05
0.3
+0.15
-0.05
Weight : Approx 0.23g
a. Type No.
b. Lot No.
IC–VCE Characteristics
(Typical)
hFE–IC Temperature Characteristics (Typical)
θj-a
–
t Characteristics
IC–VBE Temperature Characteristics
(Typical)
Pc–Ta Derating
0
0
–1
–2
–2.4
–1 –2 –3 –6–4 –5
Collector-Emitter Voltage VCE(V)
Collector Current IC(A)
I
B
=–0.3mA
–1.2mA
–0.4mA
–0.5mA
–0.6mA
–0.8mA
–1.0mA
Safe Operating Area (Single Pulse)
–1 –10–5 –100–50
–0.05
–0.1
–1
–3
–0.5
Collector-Emitter Voltage VCE(V)
Collector Current IC(A)
0.3
100
300
10
1
0.001 0.01 0.1 1 10 100 1000
Time t(ms)
Transient Thermal Resistance θj-a(˚C/W)
1.5
0.5
1.0
0
0 25 50 75 100 150125
Ambient Temperature Ta(˚C)
Maximum Power Dissipation PC(W)
0
–2.4
–1
–2
0–3–1 –2
Base-Emittor Voltage V
BE(V)
Collector Current IC(A)
(VCE=–4V)
125˚C (Case Temp)
25˚C (Case Temp)
–30˚C (Case Temp)
Diode IF–VF Characteristics
0.01
1.2
1
0.1
0.05
0.5
0 1 1.6
Forward Voltage V
F(V)
Forward Current IF(A)
(VCE=–4V)
–0.02 –0.05 –0.1 –0.5 –1 –2.4
50
100
1000
5000
500
10000
Collector Current IC(A)
DC Current Gain hFE
125˚C
–30˚C
25˚C
125˚C
–10˚C
25˚C
–0.2 –1–0.5 –2.4
0.1
1
2
0.5
Switching Time ton•tstg•tf( µs)
Collector Current IC(A)
tstg
ton
tf
VCC 30V
–IB1=IB2=2mA
ton•tstg•tf–IC Characteristics
(Typical)
0
–2
–3
–1
–5–1–0.5–0.1
Base Current IB(mA)
Collector-Emitter Saturation Voltage VCE(sat)(V)
125˚C
–30˚C
(IC=–0.5A)
Glass epoxy substrate
(95 x 69 x 1.2mm)
Natural Cooling
–5.0mA
–2.0mA
–10.0mA
Without Heatsink
Natural Cooling
1ms
100µs
10ms
25˚C
VCE(sat)–IB Temperature Characteristics (Typical)
Application : Voltage change switch for motor
2
(4kΩ)
4
(100Ω)
13
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