Sanken Electric Co SAH02 Datasheet

162

Silicon PNP Epitaxial Planar Transistor with Shottky Barrier Diode

Application : Chopper Regulator

Symbol
V

CBO

VCEO
VEBO
IC
IB
PC
Tj
T

stg

SAH02

–30
–30
–10

–3

–0.5

800(Ta=25°C)

125

–40 to +125

Unit

V
V
V
A
A

mW

°C
°C

■

Absolute maximum ratings

■

Electrical Characteristics

Symbol

I

CBO

IEBO
V(BR)CEO
hFE1
hFE2
VCE(sat)
fT
COB

SAH02

–

10max

–

10max

–

30min
100min
150min

–

0.3max

100typ

45typ

Unit

µ

A

µ

A

V

V

MHz

pF

Conditions

V

CB=–30V

V

EB=–10V

I

C=–10mA

VCE=–2V, IC=–1A

V

CE=–2V, IC=–0.5A

I

C=–0.5A, IB=–20mA

V

CE=–12V, IE=0.3A

V

CB=–10V, f=1MHz

SAH02

(Ta=25°C)

(Ta=25°C)

IC–VCE Characteristics

(Typical)

hFE–IC Temperature Characteristics (Typical)

θj-a

–

t Characteristics

IC–VBE Temperature Characteristics

(Typical)

Pc–Ta Derating

0

0

–1

–2

–3

–1 –2 –3 –6–4 –5

Collector-Emitter Voltage VCE(V)

Collector Current IC(A)

I

B

=–3mA

–100mA

–20mA

–10mA

–15mA

–5mA

–5mA

Safe Operating Area (Single Pulse)

–3 –10–5 –50

–0.03

–0.1

–0.05

–1

–5

–0.5

Collector-Emitter Voltage V

CE(V)

Collector Current IC(A)

1ms

10ms

Without Heatsink

Natural Cooling

0.3

100

300

10

1

0.001 0.01 0.1 1 10 100 1000
Time t(ms)

Transient Thermal Resistance θj-a(˚C/W)

1.0

0.5

0

0 25 50 75 100 125

Ambient Temperature Ta(˚C)

Maximum Power Dissipation PC(W)

Glass epoxy substrate
(95 x 69 x 1.2mm)
Natural Cooling

0

–3

–1

–2

0 –1.5–0.5 –1.0

Base-Emittor Voltage V

BE(V)

Collector Current IC(A)

(VCE=–2V)

125˚C (Case Temp)

25˚C (Case Temp)

–30˚C (Case Temp)

Diode IF–VF Characteristics

0

3

1

2

0 1.00.5

Forward Voltage V

F(V)

Forward Current IF(A)

(VCE=–2V)

–0.01 –0.05 –0.1 –0.5 –1 –3

100

500

1000

Collector Current IC(A)

DC Current Gain hFE

125˚C

–30˚C

25˚C

125˚C

–30˚C

25˚C

–0.1 –1–0.5 –3

1.0

0.8

0.6

0.4

0.2

0

Switching Time ton•tstg•tf(µs)

Collector Current IC(A)

tstg

ton

tf

VCC 12V
–IB1=IB2=30mA

ton•tstg•tf–IC Characteristics

(Typical)

VCE(sat)–IB Temperature Characteristics (Typical)

0

–1.0

–1.5

–0.5

–300–10 –100–50–5–1

Base Current IB(mA)

Collector-Emitter Saturation Voltage VCE(sat)(V)

125˚C

25˚C

–30˚C

(IC=–0.5A)

100µs

External Dimensions PS Pack

2.54

±0.25

1.4

±0.2

3.6

±0.2

6.3

±0.2

8.0

±0.5

1.0

±0.3

3.0

±0.2

9.8

±0.3

0~0.1

0.25

4.32

±0.2

0.89

±0.15

4.8

max

6.8

max

4.0

max

ab

1

2

3
4

0.75

+0.15

-0.05

0.3

+0.15

-0.05

Equivalent circuit

VR IR=100

µ

A 30 min V

VF IF=0.5A 0.55 max V

t r r IF=±100mA 15 typ ns

Weight : Approx 0.23g
a. Type No.
b. Lot No.

2

13

4