Sanken Electric Co FN812 Datasheet
Power Transistor FN812
Absolute Maximum Ratings
(Ta=25ºC) (Ta=25ºC)
Symbol Ratings Unit
V
V
V
I
I
P
Tj
Tstg
■
C
B
CBO
CEO
EBO
C
I
C
(A)
C
I
— V
8
6
4
2
120
100
6
8 (pulse 12)
3
35 (Tc=25ºC)
150
–55 to +150
Characteristics (typ.)
CE
A
A
300m
150m
200mA
100m
V
V
V
A
A
W
ºC
ºC
A
A
75m
I
Electrical Characteristics
Symbol Test Conditions Ratings Unit
I
CBO
I
EBO
V
CEO
h
FE
V
CE (sat)
V
I
C
V
IC =
CE
=
=
120V
CB
V
=
EB
50mA
=
4V, IC =
4A, IB =
6V
0.4A
Typical Switching Characteristics
R
I
V
V
BB1
BB2
(V)
(V)
10
–5
— IB Characteristics (typ.)
CE (sat)
2
1
Ic = 1A
50mA
25mA
= 10mA
B
V
CC
L
(V)
12
C
(Ω)
(A)
4
3
V
■
(V)
CE (sat)
V
10max
10max
100min
3A 70min
0.3max
I
I
(mA)
–30
Ic = 5A
t
B2
on
(µs)
1.0
(mA)
30
Ic = 3A
B1
t
(µs)
2.0
stg
External Dimensions
µA
µA
V
V
t
f
(µs)
0.5
2.54 2.54
I
— V
■
C
(A)
C
I
8
6
4
2
FM20 (full-mold)
16.9
(13.5)
4.2
2.8
C0.5
2.6
0.45
a) Type No.
b) Lot No.
(Unit: mm)
Tc = –55ºC
125ºC
10.0
3.3
4
8.4
a
b
0.8
3.9
1.35
1.35
0.85
2.2
BCE
Temperature Characteristics (typ.)
BE
25ºC
75ºC
0
01234
V
(V)
CE
h
— IC Characteristics (typ.)
■
FE
500
Typ
FE
h
100
50
30
0.01 0.05 0.1 10.5 5 8
I
(A)
C
f
— IE Characteristics (typ.)
■
T
30
Typ
20
)
MHz
(
T
f
10
0
5 10 50 100 500
I
(mA)
B
h
— IC Temperature Characteristics (typ.)
■
FE
(V
= 4V)
CE
(V
= 12V)
CE
500
Tc = 125ºC
75ºC
FE
h
■
25ºC
–55ºC
100
50
30
0.01 0.05 0.1 10.5 5 8
I
(A)
C
Safe Operating Area (single pulse)
20
(A)
C
I
0.5
10
5
1
D
.C
(Tc
100msec
= 25º C
10msec
)
1m
sec
20001000
(V
= 4V)
CE
0
0 0.5 1.0 1.5
V
j-a
— t Characteristics
■
50
10
)
5
ºC/W
(
1
j-a
0.5
0.1
0.05
0.0002
0.001
Single Pulese
0.01
0.1 1 10 100
t (sec)
P
— Ta Derating
■
C
40
30
With infinite heatsink
(W)
20
C
P
10
2
0
0
•2
0
0
100•100•2
•2
(V)
BE
NO FIN (Ta
= 25ºC)
Ta = 25ºC
natural air cooling
Silicone grease
Aluminum heatsink
Unit: mm
60
0
–0.01 –0.05 –0.1 –1–0.5 –5 –10
I
(A)
E
0.1
3 5 10 50 200100
V
(V)
CE
Without heatsink
0
0 50 100 150
Ta (
ºC)
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