100V, 30A Schottky barrier diode in TO220F package
FME-230A
■Absolute maximum ratings ■Electrical characteristics
Parameter
V
RM
I
F(AV)
I
FSM
I2t
Tj
Tstg
I
35
30
(W)
F
25
20
15
10
Forward power loss P
5
0
0 5 10 15 3020 25
Ratings Unit Conditions
100
30
150
112
– 40 to +150
– 40 to +150
F(AV)–PF
Tj= 150ºC
t
T
Characteristic
t/T=1/6
t/T=1/ 3, Sinewave
Average forward current I
D.C.
F(AV)
V
A
A
2
A
s
°C
°C
t/T=1/2
(A)
Parameter
V
F
I
R
10ms Half-cycle sinewave Single Shot
H.I
Rth( j -c)
VF–I
Characteristic (Typ.)
100
(A)
F
Forward current I
0.01
0.001
F
10
1
0.1
0 0.4 0.8 1.2 1.6
Ta=150°C
125°C
100°C
60°C
25°C
Forward voltage V
(V)
F
Ratings Unit Conditions
V0.85
IF=15A
1.5max
150max
R
4.0max
mA
mA
°C/W
(A)
Average forward current I
V
R=VRM
Tj =150°C
Junction-to-case
T
C –IF(AV)
30
25
t/T=1/6
F(AV)
20
=
t /T 1/3, Sinewave
15
10
Tj= 150ºC
5
t
T
0
0 50 100 150
Case temperature T
(Ta=25°C)
, VR=VRM
Characteristic
t /T 1 /2
(°C)
C
=
D.C.
V
=0V
R
Characteristic
V
R –PR
30
Tj= 150ºC
25
t
T
(W)
R
20
15
10
Reverse power loss P
5
0
0 20 40 60 80 100
Reverse voltage VR (V)
External dimensions
Flammability:
UL94V-0 or equivalent
10.0
3.3
4.04.4
16.913.5
0.8
3.9
±0.5
1–t /T =2/3
1–t /T =1/2
1.35
0.85
2.542.54
1–t /T =5/6
(Unit: mm)
+0.2
–0.1
0.45
Sinewave
4.2
2.8
C0.5
2.4
VR –I
Characteristic (Typ.)
100
(mA)
R
0.1
0.01
Reverse current I
0.001
0.0001
R
Ta=150°C
10
1
020 806040 100
Reverse voltage VR (V)
Reference data
VF Distribution
0.84
0.83
0.82
0.81
0.80
(V)
0.79
F
V
0.78
0.77
0.76
0.75
0102030 5040
(IF=15A)
N (pcs)
125°C
100°C
60°C
25°C
IR Distribution
50
45
40
35
30
(µA)
25
R
I
20
15
10
5
0102030 5040
(A)
F(AV)
Average forward current I
(V
=100V, Ta= 25°C)
R
N (pcs)
TC –I
30
25
20
15
10
5
1–t /T=1/6
0
0 50 100 150
Characteristic
F(AV)
Sinewave
1– t / T=1/2
1–t /T=1/3
Case temperature T
IR Distribution
(V
=100V, Ta=150°C)
60
58
56
54
52
50
(mA)
48
R
I
46
44
42
40
0102030 5040
R
N (pcs)
V
Tj= 150ºC
t
T
(°C)
C
=100V
R
D.C.