100V, 20A Schottky barrier diode in TO220F package
FME-220A
■Absolute maximum ratings ■Electrical characteristics
Parameter
V
RM
I
F(AV)
I
FSM
I2t
Tj
Tstg
25
20
(W)
F
15
10
5
Forward power loss P
0
0 5 10 15 20
Ratings Unit Conditions
100
20
120
72
– 40 to +150
– 40 to +150
I
F(AV)–PF
Tj= 150ºC
t
T
Characteristic
t/T=1/ 3, Sinewave
Average forward current I
t/T=1/6
D.C.
V
A
A
A
°C
°C
t/T=1/2
F(AV)
2
s
(A)
Parameter
V
F
I
R
10ms Half-cycle sinewave Single Shot
H.I
Rth( j -c)
VF–I
Characteristic (Typ.)
100
(A)
F
Forward current I
0.01
0.001
F
10
1
0.1
0 0.4 0.8 1.2 1.6
Ta=150°C
125°C
100°C
60°C
25°C
Forward voltage V
F
Ratings Unit Conditions
V0.85
IF=10A
mA
mA
°C/W
V
R=VRM
Tj =150°C
Junction-to-case
T
C –IF(AV)
20
(A)
F(AV)
Average forward current I
t/T=1/6
16
=
t /T 1/3, Sinewave
12
8
Tj= 150ºC
4
t
T
0
0 50 100 150
R
(V)
1.0max
100max
4.0max
Case temperature T
(Ta=25°C)
, VR=VRM
Characteristic
(°C)
C
V
R
=
t /T 1 /2
D.C.
=0V
Characteristic
V
R –PR
18
Tj= 150ºC
16
t
14
T
(W)
R
12
10
8
6
4
Reverse power loss P
2
0
0 20 40 60 80 100
Reverse voltage VR (V)
External dimensions
Flammability:
UL94V-0 or equivalent
3.3
4.04.4
16.913.5
0.8
3.9
±0.5
1–t /T =1/2
10.0
0.85
2.542.54
1–t /T =5/6
1–t /T =2/3
(Unit: mm)
1.35
0.45
+0.2
–0.1
Sinewave
4.2
2.8
C0.5
2.4
VR –I
Characteristic (Typ.)
100
(mA)
R
0.1
0.01
Reverse current I
0.001
0.0001
R
Ta=150°C
10
1
020 806040 100
Reverse voltage VR (V)
Reference data
VF Distribution
0.80
0.79
0.78
(V)
F
V
0.77
0.76
0.75
0102030 5040
N (pcs)
(I
F
=10A)
125°C
100°C
60°C
25°C
IR Distribution
50
45
40
35
30
(µA)
25
R
I
20
15
10
5
0102030 5040
20
(A)
16
F(AV)
12
Average forward current I
(V
=100V, Ta= 25°C)
R
N (pcs)
TC –I
1–t /T=1/6
8
4
T
0
0 50 100 150
Characteristic
F(AV)
Tj= 150ºC
t
Case temperature T
IR Distribution
40
39
38
37
36
35
(mA)
R
I
34
33
32
31
30
0102030 5040
Sinewave
(V
V
=100V
R
1– t / T=1/2
1–t /T=1/3
(°C)
C
=100V, Ta=150°C)
R
N (pcs)
D.C.