Sanken Electric Co FKV660 Datasheet

MOS FET FKV660 (under development)

Absolute Maximum Ratings

(Ta=25ºC) (Ta=25ºC)
Symbol Ratings Unit
V

DSS

V

GSS

I

D

I

D (pulse)

P

D

T

ch

Tstg

*

P

100µs, duty 1%

W

*

60

±20
±50

±150

40 (Tc=25ºC)

150

–55 to +150

V
V
A

A
W
ºC
ºC

Electrical Characteristics

Symbol Test Conditions

V

(BR) DSSID

I

GSS

I

DSS

V

TH

R

e

(yfs)

R

DS (ON)

Ciss
Coss
Crss
t

d (on)

t

r

t

d (off)

t

f

V

SD

=

V

DS

V

DS

V

DS

V

GS

I

SD

100µA, V

V

GS

V

GS

60V, V

=

10V, I

=

=
=

V
f

=
V

V

R

V

50A, V

=

= +
= –

D

10V, I
10V, I

10V

=

DS

1.0MHz
=

GS

I

25A

=

D

12V

DD

0.48Ω

=

L

10V

=

GS

0V

=

GS

20V
20V

0V

=

GS

250µA 2.01.0

=

25A 20.0

=

D

25A

=

D

0V

0V

=

GS

Ratings

min typ max

60

+10

–5

100

11 14
2000
900

100

To be

defined

1.0 1.5

Unit

V

µA
µA

V
S

mΩ

pF
pF
pF
ns
ns
ns
ns

V

External Dimensions

±0.2

10.0

3.3

±0.2

±0.2

4.0

±0.3

8.4

16.9

a

±0.2

b

0.8

±0.2

3.9

13.0min

2.54

GDS

±0.2

1.35

1.35

0.85

2.54

±0.2

2.2

FM20 (full-mold)

±0.15

±0.15

+0.2

–0.1

0.45

±0.2

4.2

2.8

+0.2
–0.1

a) Type No.
b) Lot No.

(Unit: mm)

C0.5

±0.2

2.4

77