MOS FET FKV560S (under development)
Absolute Maximum Ratings
(Ta=25ºC) (Ta=25ºC)
Symbol Ratings Unit
V
DSS
V
GSS
I
D
I
D (pulse)
P
D
T
ch
Tstg
*
P
100µs, duty 1%
W
*
50
±20
±45
±135
60 (Tc=25ºC)
150
–55 to +150
V
V
A
A
W
ºC
ºC
Electrical Characteristics
Symbol Test Conditions
V
(BR) DSSID
I
GSS
I
DSS
V
TH
R
e
(yfs)
R
DS (ON)
Ciss
Coss
Crss
t
d (on)
t
r
t
d (off)
t
f
V
SD
=
V
DS
V
DS
V
DS
V
GS
I
SD
100µA, V
V
= +
GS
V
= –
GS
50V, V
=
10V, I
=
10V, I
=
10V, I
=
V
=
DS
1.0MHz
f
=
V
GS
I
=
D
V
DD
R
0.48Ω
=
L
V
=
GS
50A, V
=
0V
=
GS
20V
20V
0V
=
GS
250µA2.0 1.0
=
D
25A 20.0
=
D
25A
=
D
10V
0V
=
25A
12V
10V
0V
=
GS
Ratings
min typ max
50
+10
–5
100
9 11
2000
1000
150
To be
defined
1.0 1.5
Unit
V
µA
µA
V
S
mΩ
pF
pF
pF
ns
ns
ns
ns
V
External Dimensions
±0.3
10.2
(1.4)
a
–0.5
+0.3
±0.3
b
10.0
8.6
–0.5
+0.3
3.0
±0.5
2.54
1.6
1.2
2.54
±0.2
1.27
0.86
TO220S
±0.2
+0.2
–0.1
±0.5
±0.2
4.44
(1.5)
a) Type No.
b) Lot No.
(Unit: mm)
±0.2
1.3
+0.2
–0.1
0.1
±0.1
0.4
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