MOS FET FKV560 (under development)
Absolute Maximum Ratings
(Ta=25ºC) (Ta=25ºC)
Symbol Ratings Unit
V
DSS
V
GSS
I
D
I
D (pulse)
P
D
T
ch
Tstg
*
P
100µs, duty 1%
W
*
50
±20
±60
±180
40 (Tc=25ºC)
150
–55 to +150
V
V
A
A
W
ºC
ºC
Electrical Characteristics
Symbol Test Conditions
V
(BR) DSSID
I
GSS
I
DSS
V
TH
R
e
(yfs)
R
DS (ON)
Ciss
Coss
Crss
t
d (on)
t
r
t
d (off)
t
f
V
SD
=
V
DS
V
DS
V
DS
V
GS
I
SD
100µA, V
V
= +
GS
V
= –
GS
50V, V
=
10V, I
=
10V, I
=
10V, I
=
V
=
DS
1.0MHz
f
=
V
GS
I
=
D
V
DD
0.48Ω
R
=
L
V
=
GS
50A, V
=
0V
=
GS
20V
20V
0V
=
GS
250µA 2.31.3
=
D
25A 20.0
=
D
25A
=
D
10V
0V
=
25A
12V
10V
0V
=
GS
Ratings
min typ max
50
+10
–5
100
9 11
2000
1000
150
To be
defined
1.0 1.5
Unit
V
µA
µA
V
S
mΩ
pF
pF
pF
ns
ns
ns
ns
V
External Dimensions
±0.2
10.0
3.3
±0.2
±0.2
4.0
±0.3
8.4
16.9
a
±0.2
b
0.8
±0.2
3.9
13.0min
2.54
GDS
±0.2
1.35
1.35
0.85
2.54
±0.2
2.2
FM20 (full-mold)
±0.15
±0.15
+0.2
–0.1
0.45
±0.2
4.2
2.8
+0.2
–0.1
a) Type No.
b) Lot No.
(Unit: mm)
C0.5
±0.2
2.4
74