MOS FET FKV460 (under development)
Absolute Maximum Ratings
(Ta=25ºC) (Ta=25ºC)
Symbol Ratings Unit
V
DSS
V
GSS
I
D
I
D (pulse)
P
D
T
ch
Tstg
*
P
100µs, duty 1%
W
*
40
+20, –10
±60
±180
40 (Tc=25ºC)
150
–55 to +150
V
V
A
A
W
ºC
ºC
Electrical Characteristics
Symbol Test Conditions
=
V
(BR) DSSID
I
GSS
I
DSS
V
TH
R
e
(yfs)
R
DS (ON)
Ciss
Coss
Crss
t
d (on)
t
r
t
d (off)
t
f
V
SD
100µA, VGS =
V
V
=
V
DS
VDS =
VDS =
VGS =
f
V
R
V
ISD =
GS
GS
10V, ID =
V
=
V
ID =
L
50A, VGS =
= +
20V
= –
20V
40V, VGS =
10V, ID =
10V, ID =
=
10V
DS
1.0MHz
=
0V
GS
25A
12V
DD
=
0.48Ω
=
10V
GS
0V
0V
250µA2.3 1.3
25A 20.0
25A
0V
Ratings
min typ max
40
+10
–5
100
6 8
2000
1200
200
To be
defined
1.0 1.5
Unit
V
µA
µA
V
S
mΩ
pF
pF
pF
ns
ns
ns
ns
V
External Dimensions
±0.2
10.0
3.3
±0.2
±0.2
4.0
±0.3
8.4
16.9
a
±0.2
b
0.8
±0.2
3.9
13.0min
2.54
GDS
±0.2
1.35
1.35
0.85
2.54
±0.2
2.2
FM20 (full-mold)
±0.15
±0.15
+0.2
–0.1
0.45
±0.2
4.2
2.8
+0.2
–0.1
a) Type No.
b) Lot No.
(Unit: mm)
C0.5
±0.2
2.4
72