161
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1659)
Application : Audio, Series Regulator and General Purpose
Symbol
V
CBO
VCEO
VEBO
IC
IB
PC
Tj
T
stg
2SD2589
110
110
5
6
1
50(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
■
Absolute maximum ratings
■
Electrical Characteristics
Symbol
I
CBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
2SD2589
100
max
100max
110min
5000min∗
2.5
max
3.0max
60typ
55typ
Unit
µ
A
µ
A
V
V
V
MHz
pF
Conditions
V
CB=110V
V
EB=5V
I
C=30mA
V
CE=4V, IC=5A
I
C=5A, IB=5mA
I
C=5A, IB=5mA
V
CE=12V, IE=–0.5A
V
CB=10V, f=1MHz
Darlington 2SD2589
(Ta=25°C)
(Ta=25°C)
External Dimensions FM-25(TO220)
BE
2.5 2.5
C
16.0
±0.7
12.0min
4.0max
8.8
±0.2
1.35
0.65
+0.2
-0.1
10.2
±0.2
ø3.75
±0.2
3.0
±0.2
4.8
±0.2
1.4
2.0
±0.1
a
b
Weight : Approx 2.6g
a. Type No.
b. Lot No.
■Typical Switching Characteristics (Common Emitter)
V
CC
(V)
30
RL
(Ω)
6
IC
(A)
5
V
BB2
(V)
–5
IB2
(mA)
–5
t
on
(µs)
0.8typ
t
stg
(µs)
6.2typ
t
f
(µs)
1.1typ
I
B1
(mA)
5
VBB1
(V)
10
∗h
FE Rank O(5000to12000), P(6500to20000), Y(15000to30000)
0
0
2
4
6
264
I
B
=0.1mA
5mA
1mA
0.5mA
0.4mA
0.3mA
0.2mA
0.02 0.1 0.5 1 65
(VCE=4V)
1000
500
200
5000
10000
40000
Typ
0
6
4
2
0 2.521
(VCE=4V)
0
3
2
1
0.1
10.5 105 10050
IC =5A
IC =3A
(VCE=4V)
0.02 0.1 5160.5
1000
500
100
5000
10000
40000
125˚C
25˚C
–0.02 –0.1 –1 –6
0
40
20
80
60
(VCE=12V)
Typ
0.4
1
5
0.5
1 10 100 1000 2000
50
40
30
20
10
2
0
0 25 50 75 100 125 150
IC–VCE Characteristics
(Typical)
VCE(sat)–IB Characteristics
(Typical)
IC–VBE Temperature Characteristics
(Typical)
Collector-Emitter Voltage VCE(V)
Base Current IB(mA)
Base-Emittor Voltage VBE(V)
Collector Current IC(A)
Collector-Emitter Saturation Voltage V
CE(sat)(V)
Collector Current I
C(A)
125˚C (Case Temp)
25˚C (Case Temp)
–30˚C (Case Temp)
hFE–IC Characteristics
(Typical)
hFE–IC
Temperature Characteristics (Typical)
θj-a
–
t Characteristics
Collector Current IC(A)
Collector Current I
C(A)
Time t(ms)
DC Current Gain hFE
DC Current Gain hFE
Transient Thermal Resistance θj-a(˚C/W)
Safe Operating Area (Single Pulse)
fT–IE Characteristics
(Typical)
Pc–Ta Derating
Cut-off Frequency fT(MHZ)
Maximum Power Dissipation PC(W)
With Infinite heatsink
Emitter Current IE(A)
Ambient Temperature Ta(˚C)
Without Heatsink
–30˚C