Sanken Electric Co 2SD2561 Datasheet
159
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1648)
Application : Audio, Series Regulator and General Purpose
Symbol
V
CBO
VCEO
VEBO
IC
IB
PC
Tj
T
stg
2SD2561
150
150
5
17
1
200(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
■
Absolute maximum ratings
■
Electrical Characteristics
Symbol
I
CBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
2SD2561
100
max
100max
150min
5000min∗
2.5
max
3.0max
70typ
120typ
Unit
µ
A
µ
A
V
V
V
MHz
pF
Conditions
V
CB=150V
V
EB=5V
I
C=30mA
V
CE=4V, IC=10A
I
C=10A, IB=10mA
I
C=10A, IB=10mA
V
CE=12V, IE=–2A
V
CB=10V, f=1MHz
Darlington 2SD2561
(Ta=25°C)
(Ta=25°C)
Safe Operating Area (Single Pulse)
IC–VCE Characteristics
(Typical)
0
0
10
5
15
17
246
Collector-Emitter Voltage V
CE(V)
Collector Current IC(A)
50mA
I
B
=0.3mA
0.5mA
0.8mA
2mA
1.0mA
10mA
1.5mA
3mA
VCE(sat)–IB Characteristics
(Typical)
0
3
2
1
0.2
10.5 105 20010050
Base Current IB(mA)
Collector-Emitter Saturation Voltage VCE(sat)(V)
IC =.15A
IC =.10A
IC =.5A
IC–VBE Temperature Characteristics
(Typical)
0
15
17
5
10
0 2 2.61
Base-Emittor Voltage VBE(V)
Collector Current IC(A)
(VCE=4V)
125˚C (Case Temp)
25˚C (Case Temp)
–30˚C (Case Temp)
hFE–IC Characteristics
(Typical)
Collector Current IC(A)
02 0.5 1 10 175
50000
1000
5000
10000
500
DC Current Gain hFE
(VCE=4V)
Typ
02 0.5 1 10 175
50000
1000
5000
10000
500
DC Current Gain hFE
(VCE=4V)
hFE–IC
Temperature Characteristics (Typical)
Collector Current IC(A)
125˚C
–30˚C
25˚C
Time t(ms)
0.1
1
2
0.5
1 10 100 1000 2000
Transient Thermal Resistance θj-a(˚C/W)
θj-a
–
t Characteristics
f
T
–
IE Characteristics
(Typical)
–0.02 –0.1 –1 –10
0
20
40
80
60
Cut-off Frequency fT(MHZ)
(VCE=12V)
Emitter Current I
E(A)
Pc–Ta Derating
200
160
120
80
40
5
0
0 25 50 75 100 125 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation PC(W)
With Infinite heatsink
Without Heatsink
External Dimensions MT-200
2
3
1.05
+0.2
-0.1
BE
5.45
±0.1
5.45
±0.1
2-ø3.2
±0.1
36.4
±0.3
9
24.4
±0.2
7
21.4
±0.3
20.0min
4.0max
0.65
+0.2
-0.1
3.0
+0.3
-0.1
6.0
±0.2
2.1
a
b
C
Weight : Approx 18.4g
a. Type No.
b. Lot No.
■Typical Switching Characteristics (Common Emitter)
V
CC
(V)
40
RL
(Ω)
4
IC
(A)
10
V
BB2
(V)
–5
IB2
(mA)
–10
t
on
(µs)
0.8typ
t
stg
(µs)
4.0typ
t
f
(µs)
1.2typ
I
B1
(mA)
10
VBB1
(V)
10
Equivalent circuit
∗hFE Rank O(5000to12000), P(6500 to20000), Y(15000to30000)
B
C
(70Ω)
E
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