Sanken Electric Co 2SD2560 Datasheet
158
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1647)
Application : Audio, Series Regulator and General Purpose
Symbol
V
CBO
VCEO
VEBO
IC
IB
PC
Tj
T
stg
2SD2560
150
150
5
15
1
130(Tc=25°C)
150
–55to+150
Unit
V
V
V
A
A
W
°C
°C
■
Absolute maximum ratings
■
Electrical Characteristics
Symbol
I
CBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
2SD2560
100
max
100max
150min
5000min∗
2.5
max
3.0max
70typ
120typ
Unit
µ
A
µ
A
V
V
V
MHz
pF
Conditions
V
CB=150V
V
EB=5V
I
C=30mA
V
CE=4V, IC=10A
I
C=10A, IB=10mA
I
C=10A, IB=10mA
V
CE=12V, IE=–2A
V
CB=10V, f=1MHz
Darlington 2SD2560
(Ta=25°C) (Ta=25°C)
IC–VCE Characteristics
(Typical)
Safe Operating Area (Single Pulse)
0
0
10
5
15
246
Collector-Emitter Voltage V
CE(V)
Collector Current IC(A)
50mA
I
B
=0.3mA
0.5mA
0.8mA
2mA
1.0mA
3mA
10mA
1.5mA
VCE(sat)–IB Characteristics
(Typical)
0
3
2
1
0.2
10.5 105 20010050
Base Current IB(mA)
Collector-Emitter Saturation Voltage VCE(sat)(V)
IC =.15A
IC =.10A
IC =.5A
IC–VBE Temperature Characteristics
(Typical)
0
15
5
10
0 2 2.21
Base-Emittor Voltage VBE(V)
Collector Current IC(A)
(VCE=4V)
125˚C (Case Temp)
25˚C (Case Temp)
–30˚C (Case Temp)
hFE–IC Characteristics
(Typical)
Collector Current IC(A)
02 0.5 1 10 155
50000
1000
5000
10000
500
DC Current Gain hFE
(VCE=4V)
Typ
02 0.5 1 10 155
50000
1000
5000
10000
500
DC Current Gain hFE
(VCE=4V)
hFE–IC
Temperature Characteristics (Typical)
Collector Current IC(A)
125˚C
–30˚C
25˚C
θj-a
–
t Characteristics
0.1
1.0
3.0
0.5
1 10 100 1000 2000
Time t(ms)
Transient Thermal Resistance θj-a(˚C/W)
fT–IE Characteristics
(Typical)
(VCE=12V)
Emitter Current I
E(A)
–0.05–0.02 –01 –0.5 –1 –5 –10
0
40
20
60
80
Cut-off Frequency fT(MHZ)
Pc–Ta Derating
130
100
50
3.5
0
Ambient Temperature Ta(˚C)
Maximum Power Dissipation PC(W)
With Infinite heatsink
Without Heatsink
0 25 50 75 100 125 150
External Dimensions MT-100(TO3P)
15.6
±0.4
9.6
19.9
±0.3
4.0 2.0
5.0
±0.2
1.8
ø3.2
±0.1
2
3
1.05
+0.2
-0.1
20.0min
4.0max
BE
5.45
±0.1
5.45
±0.1
C
4.8
±0.2
0.65
+0.2
-0.1
1.4
2.0
±0.1
a
b
Weight : Approx 6.0g
a. Type No.
b. Lot No.
■Typical Switching Characteristics (Common Emitter)
V
CC
(V)
40
RL
(Ω)
4
IC
(A)
10
V
BB2
(V)
–5
IB2
(mA)
–10
t
on
(µs)
0.8typ
t
stg
(µs)
4.0typ
t
f
(µs)
1.2typ
I
B1
(mA)
10
VBB1
(V)
10
Equivalent circuit
∗hFE Rank O(5000to12000), P(6500to20000), Y(15000to30000)
B
C
(70Ω)
E
Loading...