Sanken Electric Co 2SD2439 Datasheet

152

Darlington 2SD2439

IC–VCE Characteristics

(Typical)

hFE–IC Characteristics

(Typical)

hFE–IC

Temperature Characteristics (Typical)

θj-a

–

t Characteristics

IC–VBE Temperature Characteristics

(Typical)

VCE(sat)–IB Characteristics

(Typical)

Pc–Ta Derating

Safe Operating Area (Single Pulse)

fT–IE Characteristics

(Typical)

0

2

4

6

10

8

246

Collector-Emitter Voltage V

CE(V)

Collector Current IC(A)

10mA

2.5mA

2mA

1.5mA

1.2mA

0.8mA

1mA

0.6mA

I

B

=0.4mA

02 0.5 1 5 10

Collector Current I

C(A)

DC Current Gain hFE

(VCE=4V)

1000

5000

10000

40000

Typ

0.1

1

3

0.5

1 10 100 10005 50 500 2000

Time t(ms)

Transient Thermal Resistance θj-a(˚C/W)

0

10

8

2

4

6

0 2 2.51

Base-Emittor Voltage VBE(V)

Collector Current IC(A)

(VCE=4V)

125˚C (Case Temp)

25˚C (Case Temp)

–30˚C (Case Temp)

80

60

40

20

3.5 0

0 50 100 150

Ambient Temperature Ta(˚C)

Maximum Power Dissipation PC(W)

With Infinite heatsink

Without Heatsink

10ms

10 5053 100 200

0.05

0.1

1

0.5

10

30

5

Collector-Emitter Voltage VCE(V)

Collector Current IC(A)

DC

100ms

0

3

2

1

0.2

10.5 105 20010050 Base Current IB(mA)

Collector-Emitter Saturation Voltage VCE(sat)(V)

IC =5A

IC =7A

IC =10A

(VCE=4V)

0.2 0.5 5 101 Collector Current I

C(A)

DC Current Gain hFE

1000

500

5000

10000

50000

70000

125˚C

25˚C

–30˚C

–0.02 –0.1 –1 –10

0

20

40

100

80

60

Cut-off Frequency fT(MHZ)

(VCE=12V)

Emitter Current I

E(A)

Typ

Without Heatsink

Natural Cooling

Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1588)

Application : Audio, Series Regulator and General Purpose

Symbol V

CBO

VCEO VEBO IC IB PC Tj T

stg

2SD2439

160 150

5

10

1

80(Tc=25°C)

150

–55 to +150

Unit

V V V A A

W °C °C

■

Absolute maximum ratings

■

Electrical Characteristics

Symbol

I

CBO

IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB

2SD2439

100

max

100max

150min

5000min∗

2.5

max

3.0max 55typ 95typ

Unit

µ

A

µ

A

V

V V

MHz

pF

Conditions

V

CB=160V

V

EB=5V

I

C=30mA

V

CE=4V, IC=7A

I

C=7A, IB=7mA

I

C=7A, IB=7mA

V

CE=12V, IE=–2A

V

CB=10V, f=1MHz

(Ta=25°C) (Ta=25°C)

■Typical Switching Characteristics (Common Emitter)

V

CC

(V) 70

R

L

(Ω)

10

IC

(A)

7

V

BB2

(V)

–5

I

B2

(mA)

–7

t

on

(µs)

0.5typ

t

stg

(µs)

10.0typ

t

f

(µs)

1.1typ

I

B1

(mA)

7

VBB1

(V) 10

External Dimensions FM100(TO3PF)

4.41.5 1.5

BEC

5.45

±0.1

ø3.3

±0.2

1.6

3.3

1.75

0.8

±0.2

2.15

1.05

+0.2

-0.1

5.45

±0.1

23.0

±0.3

16.2

9.5

±0.2

5.5

15.6

±0.2

5.5

±0.2

3.45

3.35

0.65

+0.2

-0.1

±0.2

3.0

0.8

a b

Weight : Approx 6.5g a. Type No. b. Lot No.

Equivalent circuit

∗hFE Rank O(5000to12000), P(6500to20000), Y(15000to30000)