IC–VCE Characteristics
(Typical)
hFE–IC Characteristics
(Typical)
hFE–IC
Temperature Characteristics (Typical)
θj-a
–
t Characteristics
IC–VBE Temperature Characteristics
(Typical)
VCE(sat)–IB Characteristics
(Typical)
Pc–Ta Derating
Safe Operating Area (Single Pulse)
fT–IE Characteristics
(Typical)
0
0
2
4
6
12
10
8
246
Collector-Emitter Voltage V
CE(V)
Collector Current IC(A)
10mA
2.5mA
1.2mA
1.5mA
1.0mA
2.0mA
0.8mA
0.6mA
I
B
=0.4mA
02 0.5 1 5 1012
Collector Current I
C(A)
DC Current Gain hFE
(VCE=4V)
1000
5000
10000
40000
Typ
0.1
1
2
0.5
1 10 100 10005 50 500 2000
Time t(ms)
Transient Thermal Resistance θj-a(˚C/W)
0
12
8
10
2
4
6
0 2.621
Base-Emittor Voltage VBE(V)
Collector Current IC(A)
(VCE=4V)
125˚C (Case Temp)
25˚C (Case Temp)
–30˚C (Case Temp)
160
120
80
40
5
0
0 25 50 75 100 125 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation PC(W)
With Infinite heatsink
Without Heatsink
10ms
10 5053 100 200
150
0.05
0.1
1
0.5
10
30
5
Collector-Emitter Voltage V
CE(V)
Collector Current IC(A)
DC
100ms
Without Heatsink
Natural Cooling
0
3
2
1
0.2
10.5 105 20010050
Base Current IB(mA)
Collector-Emitter Saturation Voltage VCE(sat)(V)
IC =5A
IC =7A
IC =10A
(VCE=4V)
0.2 0.5 5 10 121
Collector Current I
C(A)
DC Current Gain hFE
1000
600
5000
10000
50000
70000
125˚C
25˚C
–30˚C
–0.02 –0.1 –1 –10
0
20
40
100
80
60
Cut-off Frequency fT(MHZ)
(VCE=12V)
Emitter Current IE(A)
Typ
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1570)
Application : Audio, Series Regulator and General Purpose
Symbol
V
CBO
VCEO
VEBO
IC
IB
PC
Tj
T
stg
2SD2401
160
150
5
12
1
150(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
■
Absolute maximum ratings
■
Electrical Characteristics
Symbol
I
CBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
2SD2401
100
max
100max
150min
5000min∗
2.5
max
3.0max
55typ
95typ
Unit
µ
A
µ
A
V
V
V
MHz
pF
Conditions
V
CB=160V
V
EB=5V
I
C=30mA
V
CE=4V, IC=7A
I
C=7A, IB=7mA
I
C=7A, IB=7mA
V
CE=12V, IE=–2A
V
CB=10V, f=1MHz
(Ta=25°C)
(Ta=25°C)
External Dimensions MT-200
■Typical Switching Characteristics (Common Emitter)
V
CC
(V)
70
RL
(Ω)
10
IC
(A)
7
V
BB2
(V)
–5
I
B2
(mA)
–7
t
on
(µs)
0.5typ
t
stg
(µs)
10.0typ
t
f
(µs)
1.1typ
I
B1
(mA)
7
VBB1
(V)
10
Weight : Approx 18.4g
a. Type No.
b. Lot No.
Equivalent circuit
∗hFE Rank O(5000to12000), P(6500to20000), Y(15000to30000)
B
C
(70Ω)
±0.1
2-ø3.2
±0.3
21.4
20.0min
a
b
4.0max
±0.1
5.45
BE
36.4
24.4
±0.3
±0.2
C
2.1
9
7
2
3
+0.2
1.05
-0.1
±0.1
5.45
±0.2
6.0
+0.2
0.65
-0.1
+0.3
3.0
-0.1
E