Power Transistor 2SD2382
Absolute Maximum Ratings
(Ta=25ºC) (Ta=25ºC)
Symbol Ratings Unit
V
V
V
I
I
P
CBO
CEO
EBO
C
B
C
V65±5
V65±5
V 6
A ±6 (pulse ±10)
A 1
W30 (Tc=25ºC)
Tj ºC150
Tstg ºC–55 to +150
I
— V
■
(A)
C
I
Characteristics (typ.)
C
CE
10
8
6
4
2
30mA
Electrical Characteristics
Symbol Test Conditions Ratings Unit
I
CBO
I
EBO
V
CEO
h
FE
V
CE (sat)VIC
V
FEC
Es/b mJL
=
60V 10max
CB
=
6V 10max
EB
50mA 60 to 70
V
=
1V, IC =
CE
=
1.5A, IB =
=
10mH, single pulse 200min
1A 700 to 3000
15mA 0.15max
=
6A 1.5max
FEC
Typical Switching Characteristics
R
I
V
V
I
B1
(mA)
30
I
B2
(mA)
–30
Ta = –55ºC
I
B
20mA
10mA
5mA
3mA
= 1mA
V
CC
L
C
BB1
(V)
(Ω)
(A)
12
■
1
V
0.75
CE (sat)
12
(V)
(sat)
CE
V
0.25
BB2
(V)
(V)
10
–5
— IB Temperature Characteristics (typ.)
0.5
0.25
25ºC
75ºC
125ºC
t
(µs)
External Dimensions
µAV
µAV
VIC =
VI
t
(µs)
0.8
stg
t
(µs)
0.35
f
on
■
= 1.5A)
(I
C
a
b
2.54 2.54
BCE
I
— V
C
BE
6
5
4
(A)
3
C
I
2
1
10.0
2.2
Temperature Characteristics (typ.)
1.35
1.35
0.85
3.3
4
8.4
16.9
0.8
3.9
(13.5)
FM20 (full-mold)
4.2
2.8
C0.5
2.6
0.45
a) Type No.
b) Lot No.
(Unit: mm)
Ta=55ºC
25ºC
75ºC
125ºC
0
012345
VCE (V)
h
— IC Characteristics (typ.)
■
FE
5000
Typ
1000
500
FE
h
100
50
30
0.01 0.05 0.1 10.5 5 10
IC (A)
f
— IE Characteristics (typ.)
■
T
30
25
20
)
15
MHz
(
10
T
f
5
0
–0.01 –0.05 –0.1 –1–0.5 –5 –10
Typ
IE (A)
0
1 5 10 50 100 400
IB (mA)
h
— IC Temperature Characteristics (typ.)
■
FE
(V
= 1V)
CE
5000
1000
500
FE
h
100
50
30
0.01 0.05 0.1 10.5 5 10
Ta = –55ºC
25ºC
75ºC
125ºC
(V
= 1V)
CE
IC (A)
Safe Operating Area (single pulse)
(V
= 1V)
CE
■
20
10
5
(A)
C
I
1
0.5
Without heatsink
natural air cooling
0.1
1 5 10 50 100
D.C (Tc
100msec
= 25ºC)
10m
0.5msec
1msec
sec
VCE (V)
0
0 0.5 1.0 1.5
VBE (V)
j-a
— t Characteristics
■
5
1
j-a (ºC/W)
0.5
0.3
1 5 10 10050 500 1000
t (ms)
P
— Ta Derating
■
C
30
20
)
W
(
C
P
150 • 150 • 2
100 • 100 • 2
10
50 • 50 • 2
Without heatsink
0
0 50 100 150
natural air cooling
Silicone grease
Aluminum heatsink
Unit: mm
With infinite heatsink
Ta (ºC)
59