Sanken Electric Co 2SD2141 Datasheet

147

2SD2141

IC–VCE Characteristics

(Typical)

hFE–IC Characteristics

(Typical)

θj-a

–

t Characteristics

VCE(sat)–IB Characteristics

(Typical)

Pc–Ta Derating

0

0

5

10

246

Collector-Emitter Voltage V

CE(V)

Collector Current IC(A)

Safe Operating Area (Single Pulse)

150mA

I

B

=1mA

2mA

4mA

18mA

20mA

120mA

90mA

60mA

0

3

2

1

0.2

10.5 105 20010050
Base Current IB(mA)

Collector Current IC(A)

1A

3A

5A

IC =7A

0.02 0.1 10.5 105

5000

10000

1000

500

100

10

50

Collector Current IC(A)

DC Current Gain hFE

(VCE=2V)

Typ

0.1

1

5

0.5

1 10 100 1000

Time t(ms)

Transient Thermal Resistance θj-a(˚C/W)

1ms

10ms

100ms

501051 100 500

0.01

0.05

0.1

1

0.5

10

20

5

Collector-Emitter Voltage V

CE(V)

Collector Current IC(A)

DC

Without Heatsink

Natural Cooling

40

30

20

10

2
0

0 25 50 75 100 125 150

Ambient Temperature Ta(˚C)

Maximum Power Dissipation PC(W)

With Infinite heatsink

Without Heatsink

50x50x2

100x100x2

150x150x2

IC–VBE Temperature Characteristics

(Typical)

0

10

5

0 2.0 2.41.0

Base-Emittor Voltage VBE(V)

Collector Current IC(A)

(VCE=4V)

125˚C (Case Temp)

25˚C (Case Temp)

–30˚C (Case Temp)

hFE–IC

Temperature Characteristics (Typical)

0.02 0.1 1.0 5

0.5

10

5000

10000

1000

500

100

50
20

Collector Current IC(A)

DC Current Gain hFE

(VCE=2V)

125˚C

–55˚C

25˚C

fT–IE Characteristics

(Typical)

(VCE=12V)

Emitter Current I

E(A)

0.050.01 01 0.5 1 5

0

20

10

30

40

Cut-off Frequency fT(MHZ)

Typ

Natural Cooling
Silicone Grease

Heatsink: Aluminum

in mm

Silicon NPN Triple Diffused Planar Transistor

Application : Ignitor, Driver for Solenoid and Motor, and General Purpose

Symbol
V

CBO

VCEO
VEBO
IC
IB
PC
Tj
T

stg

2SD2141

380±50
380±50

6

6(

Pulse10)

1

35(Tc=25°C)

150

–55 to +150

Unit

V
V
V
A
A

W
°C
°C

■

Absolute maximum ratings

■

Electrical Characteristics

2SD2141

10

max

20max
330to430
1500

min

1.5max
20typ
95typ

Unit

µ

A

mA

V

V

MHz

pF

Conditions

V

CB=330V

V

EB=6V

I

C=25mA

V

CE=2V, IC=3A

I

C=4A, IB=20mA

V

CE=12V, IE=–0.5A

V

CB=10V, f=1MHz

(Ta=25°C) (Ta=25°C)

Symbol

I

CBO

IEBO
V(BR)CEO
hFE
VCE(sat)
fT
COB

External Dimensions FM20(TO220F)

ø3.3

±0.2

10.1

±0.2

4.0

±0.2

16.9

±0.3

13.0min

8.4

±0.2

0.8

±0.2

3.9

±0.2

2.542.54

1.35

±0.15

0.85

+0.2

-0.1

1.35

±0.15

2.2

±0.2

4.2

±0.2

2.8

c

0.5

2.4

±0.2

0.45

+0.2

-0.1

BEC

a
b

Weight : Approx 2.0g
a. Type No.
b. Lot No.

Built-in Avalanche Diode
for Surge Absorbing
Darlington

Equivalent circuit

B

(1.5kΩ)(100Ω)

C

E