Sanken Electric Co 2SD2082 Datasheet

145

Darlington 2SD2082

IC–VCE Characteristics

(Typical)

hFE–IC Characteristics

(Typical)

θj-a

–

t Characteristics

IC–VBE Temperature Characteristics

(Typical)

VCE(sat)–IB Characteristics

(Typical)

Pc–Ta Derating

0

10

20

26

246135

Collector-Emitter Voltage V

CE(V)

Collector Current IC(A)

3mA

6mA

1.5mA

12mA

40mA

20mA

I

B

=1mA

Safe Operating Area (Single Pulse)

0

3

2

1

0.2

10.5 105 20010050 Base Current IB(mA)

Collector-Emitter Saturation Voltage VCE(sat)(V)

4A

8A

IC =16A

0.2 10.5 10 165

5000

30000

10000

1000

500

100

Collector Current IC(A)

DC Current Gain hFE

(VCE=4V)

Typ

1ms

10ms

10 5053 100 200

0.03

0.05

0.1

1

0.5

10

50

5

Collector-Emitter Voltage V

CE(V)

Collector Current IC(A)

DC

Without Heatsink

Natural Cooling

0.1

1

5

0.5

1 10 100 1000

Time t(ms)

Transient Thermal Resistance θj-a(˚C/W)

100

µ

s

0

16

12

8

4

021

Base-Emittor Voltage VBE(V)

Collector Current IC(A)

(VCE=4V)

125˚C (Case Temp)

25˚C (Case Temp)

–30˚C (Case Temp)

hFE–IC

Temperature Characteristics (Typical)

0.02 1 10516

5000

20000 10000

1000

500

100

Collector Current IC(A)

DC Current Gain hFE

(VCE=4V)

125˚C

–30˚C

25˚C

0.5

fT–IE Characteristics

(Typical)

–0.05–0.1 –0.5 –1

–5

–10 –16

0

20

10

30

Cut-off Frequency fT(MHZ)

(VCE=12V)

Emitter Current I

E(A)

80

60

40

20

3.5 0

05025 75 125100 150

Ambient Temperature Ta(˚C)

Maximum Power Dissipation PC(W)

With Infinite heatsink

Without Heatsink

Typ

Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1382)

Application : Driver for Solenoid, Motor and General Purpose

Symbol V

CBO

VCEO VEBO IC IB PC Tj T

stg

2SD2082

120 120

6

16(

Pulse26)

1

75(Tc=25°C)

150

–55 to +150

Unit

V V V A A

W °C °C

■

Absolute maximum ratings

■

Electrical Characteristics

2SD2082

10

max

10max

120min

2000min

1.5max

2.5max 20typ

210typ

Unit

µ

A

mA

V

V V

MHz

pF

Conditions

V

CB=120V

V

EB=6V

I

C=10mA

V

CE=4V, IC=8A

I

C=8A, IB=16mA

I

C=8A, IB=16mA

V

CE=12V, IE=–1A

V

CB=10V, f=1MHz

(Ta=25°C) (Ta=25°C)

Symbol

I

CBO

IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB

External Dimensions FM100(TO3PF)

4.41.5 1.5

BEC

5.45

±0.1

ø3.3

±0.2

1.6

3.3

1.75

0.8

±0.2

2.15

1.05

+0.2

-0.1

5.45

±0.1

23.0

±0.3

16.2

9.5

±0.2

5.5

15.6

±0.2

5.5

±0.2

3.45

3.35

0.65

+0.2

-0.1

±0.2

3.0

0.8

a b

■Typical Switching Characteristics (Common Emitter)

V

CC

(V) 40

RL

(Ω)

5

IC

(A)

8

V

BB2

(V)

–5

I

B2

(mA)

–16

t

on

(µs)

0.6typ

t

stg

(µs)

7.0typ

t

f

(µs)

1.5typ

I

B1

(mA)

16

VBB1

(V) 10

Weight : Approx 2.0g a. Type No. b. Lot No.

Equivalent circuit