Sanken Electric Co 2SD2081 Datasheet

144

Darlington 2SD2081

IC–VCE Characteristics

(Typical)

hFE–IC Characteristics

(Typical)

hFE–IC

Temperature Characteristics (Typical)

θj-a

–

t Characteristics

IC–VBE Temperature Characteristics

(Typical)

VCE(sat)–IB Characteristics

(Typical)

Pc–Ta Derating

0

3

2

1

0.2

10.5 105 20010050
Base Current IB(mA)

Collector-Emitter Saturation Voltage VCE(sat)(V)

1A

5A

IC =10A

Safe Operating Area (Single Pulse)

0

0

5

10

15

213546

Collector-Emitter Voltage V

CE(V)

Collector Current IC(A)

1mA

2mA

3mA

5mA

0.7mA

10mA

50mA

I

B

=0.5mA

0

10

8

6

4

2

0231

Base-Emittor Voltage VBE(V)

Collector Current IC(A)

(VCE=4V)

125˚C (Case Temp)

25˚C (Case Temp)

–30˚C (Case Temp)

0.03 0.1 10.5 105

5000

20000
10000

1000

500

100

30

50

Collector Current IC(A)

DC Current Gain hFE

(VCE=4V)

Typ

0.03 0.1 10.5 105

5000

20000
10000

1000

500

100

30

50

Collector Current IC(A)

DC Current Gain hFE

(VCE=4V)

125˚C

–30˚C

25˚C

1ms

10ms

10 5053 100 200

0.05

0.1

1

0.5

10

30

5

Collector-Emitter Voltage V

CE(V)

Collector Current IC(A)

DC

Without Heatsink

Natural Cooling

0.2

1

5

0.5

1 10 100 1000

Time t(ms)

Transient Thermal Resistance θj-a(˚C/W)

30

20

10

2
0

0 25 50 75 100 125 150

Ambient Temperature Ta(˚C)

Maximum Power Dissipation PC(W)

With Infinite heatsink

Without Heatsink

fT–IE Characteristics

(Typical)

–0.05 –0.1 –0.5 –1

–5

–10

0

80

100

60

40

20

120

Cut-off Frequency fT(MHZ)

(VCE=12V)

Emitter Current IE(A)

Typ

Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1259)

Application : Driver for Solenoid, Motor and General Purpose

Symbol
V

CBO

VCEO
VEBO
IC
IB
PC
Tj
T

stg

2SD2081

120
120

6

10(

Pulse15)

1

30(Tc=25°C)

150

–55 to +150

Unit

V
V
V
A
A

W
°C
°C

■

Absolute maximum ratings

■

Electrical Characteristics

2SD2081

10

max

10max

120min

2000min

1.5max

2.0max
60typ
95typ

Unit

µ

A

mA

V

V
V

MHz

pF

Conditions

V

CB=120V

V

EB=6V

I

C=10mA

V

CE=4V, IC=5A

I

C=5A, IB=5mA

I

C=5A, IB=5mA

V

CE=12V, IE=–0.5A

V

CB=10V, f=1MHz

(Ta=25°C)

(Ta=25°C)

Symbol

I

CBO

IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB

External Dimensions FM20(TO220F)

ø3.3

±0.2

10.1

±0.2

4.0

±0.2

16.9

±0.3

13.0min

8.4

±0.2

0.8

±0.2

3.9

±0.2

2.542.54

1.35

±0.15

0.85

+0.2

-0.1

1.35

±0.15

2.2

±0.2

4.2

±0.2

2.8

c

0.5

2.4

±0.2

0.45

+0.2

-0.1

BEC

a
b

Weight : Approx 2.0g
a. Type No.
b. Lot No.

Equivalent
circuit

B

C

(2kΩ) (200Ω)

E