Sanken Electric Co 2SD2045 Datasheet

143

Darlington 2SD2045

IC–VCE Characteristics

(Typical)

hFE–IC Characteristics

(Typical)

θj-a

–

t Characteristics

VCE(sat)–IB Characteristics

(Typical)

Safe Operating Area (Single Pulse)

0

0

4

2

6

3

1

5

21 3456

Collector-Emitter Voltage VCE(V)

Collector Current IC(A)

20mA

5mA

2mA

1mA

0.7mA

0.5mA

I

B

=0.4mA

0.03 0.1 10.5 65

5000

10000

1000

500

100

50

Collector Current IC(A)

DC Current Gain hFE

(VCE=2V)

Typ

0

3

2

1

0.1

10510.5 50 100

Base Current IB(mA)

Collector-Emitter Saturation Voltage VCE(sat)(V)

2A

4A

I

C

=8A

0.2

1

5

0.5

1 10 100 1000

Transient Thermal Resistance θj-a(˚C/W)

1ms

10ms

10 5053 100 200

0.05

0.1

1

0.5

10

20

5

Collector-Emitter Voltage V

CE(V)

Collector Current IC(A)

DC

Without Heatsink

Natural Cooling

IC–VBE Temperature Characteristics

(Typical)

0

3

4

5

6

2

1

021

Base-Emittor Voltage V

BE(V)

Collector Current IC(A)

(VCE=2V)

0.03 0.1 10.5 5 6

5000

10000

1000

500

100

50

Collector Current IC(A) Time t(ms)

DC Current Gain hFE

(VCE=2V)

125˚C

25˚C

hFE–IC

Temperature Characteristics (Typical)

–30˚C

fT–IE Characteristics

(Typical)

–0.05 –0.1 –0.5 –1 –5–6

0

80

100

60

40

20

120

Cut-off Frequency fT(MHZ)

(VCE=12V)

Emitter Current IE(A)

Typ

Pc–Ta Derating

50

40

30

20

10

0

0 25 50 75 100 125 150

Ambient Temperature Ta(˚C)

Maximum Power Dissipation PC(W)

125˚C (Case Temp)

25˚C (Case Temp)

–30˚C (Case Temp)

With Infinite heatsink

Without Heatsink

Silicon NPN Triple Diffused Planar Transistor

Application : Driver for Solenoid, Motor and General Purpose

Symbol
V

CBO

VCEO
VEBO
IC
IB
PC
Tj
T

stg

2SD2045

120
120

6

6(

Pulse10)

1

50(Tc=25°C)

150

–55 to +150

Unit

V
V
V
A
A

W
°C
°C

■

Absolute maximum ratings

■

Electrical Characteristics

2SD2045

10

max

10max

120min

2000min

1.5max

2.0max
50typ
70typ

Unit

µ

A

mA

V

V
V

MHz

pF

Conditions

V

CB=120V

V

EB=6V

I

C=10mA

V

CE=2V, IC=3A

I

C=3A, IB=3mA

I

C=3A, IB=3mA

V

CE=12V, IE=–1A

V

CB=10V, f=1MHz

(Ta=25°C) (Ta=25°C)

Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB

External Dimensions FM100(TO3PF)

4.41.5 1.5

BEC

5.45

±0.1

ø3.3

±0.2

1.6

3.3

1.75

0.8

±0.2

2.15

1.05

+0.2

-0.1

5.45

±0.1

23.0

±0.3

16.2

9.5

±0.2

5.5

15.6

±0.2

5.5

±0.2

3.45

3.35

0.65

+0.2

-0.1

±0.2

3.0

0.8

a
b

■Typical Switching Characteristics (Common Emitter)

V

CC

(V)
30

RL

(Ω)

10

IC

(A)

3

V

BB2

(V)
–5

I

B2

(mA)

–3

t

on

(µs)

0.5typ

t

stg

(µs)

5.5typ

t

f

(µs)

1.5typ

I

B1

(mA)

3

VBB1

(V)
10

Weight : Approx 2.0g
a. Type No.
b. Lot No.

Equivalent
circuit

B

C

(2.5kΩ)(200Ω)

E