IC–VCE Characteristics
(Typical)
hFE–IC Characteristics
(Typical)
IC–VBE Temperature Characteristics
(Typical)
Pc–Ta Derating
35
30
20
10
2
0
0 25 50 75 100 125 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation PC(W)
With Infinite heatsink
Without Heatsink
50x50x2
100x100x2
150x150x2
0
0
4
2
6
3
1
5
21 3456
Collector-Emitter Voltage VCE(V)
Collector Current IC(A)
40mA
20mA
8mA
4mA
2mA
1mA
I
B
=0.4mA
0.03 0.1 10.5 65
5000
10000
1000
500
100
30
50
Collector Current IC(A)
DC Current Gain hFE
(VCE=2V)
Typ
VCE(sat)–IB Characteristics
(Typical)
0
3
2
1
0.2 0.5 5 101 100 500 100050
Base Current I
B(mA)
Collector-Emitter Saturation Voltage VCE(sat)(V)
I
C
=1A
I
C
=3A
I
C
=8A
0
3
4
5
6
2
1
021
Base-Emittor Voltage V
BE(V)
Collector Current IC(A)
(VCE=2V)
0.03 0.1 10.5 5 6
5000
10000
1000
500
100
50
30
Collector Current IC(A)
DC Current Gain hFE
(VCE=2V)
125˚C
25˚C
hFE–IC
Temperature Characteristics (Typical)
–30˚C
θj-a
–
t Characteristics
0.3
1
5
0.5
1 10 10050 5005 1000
Time t(ms)
Transient Thermal Resistance θj-a(˚C/W)
fT–IE Characteristics
(Typical)
–0.02 –0.05 –0.1 –0.5 –1 –5–6
0
20
10
30
Cut-off Frequency fT(MHZ)
(VCE=12V)
Emitter Current IE(A)
Natural Cooling
Silicone Grease
Heatsink: Aluminum
in mm
Typ
Safe Operating Area (Single Pulse)
103
5
30010050
0.05
0.02
1
0.1
0.5
10
20
5
Collector-Emitter Voltage V
CE(V)
Collector Current IC(A)
Without Heatsink
Natural Cooling
10ms
1ms
D.C (T
C
=25C)
125˚C (Case Temp)
25˚C (Case Temp)
–30˚C (Case Temp)
Silicon NPN Triple Diffused Planar Transistor
Application : Driver for Solenoid, Relay and Motor and General Purpose
Symbol
V
CBO
VCEO
VEBO
IC
IB
PC
Tj
T
stg
2SD2017
300
250
20
6
1
35(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
■
Absolute maximum ratings
■
Electrical Characteristics
2SD2017
100
max
10max
250min
2000min
1.5max
2.0max
20typ
65typ
Unit
µ
A
mA
V
V
V
MHz
pF
Conditions
V
CB=300V
V
EB=20V
I
C=25mA
V
CE=2V, IC=2A
I
C=2A, IB=2mA
I
C=2A, IB=2mA
V
CE=12V, IE=–1A
V
CB=10V, f=1MHz
(Ta=25°C)
(Ta=25°C)
Symbol
I
CBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
External Dimensions FM20(TO220F)
ø3.3
±0.2
10.1
±0.2
4.0
±0.2
16.9
±0.3
13.0min
8.4
±0.2
0.8
±0.2
3.9
±0.2
2.542.54
1.35
±0.15
0.85
+0.2
-0.1
1.35
±0.15
2.2
±0.2
4.2
±0.2
2.8
c
0.5
2.4
±0.2
0.45
+0.2
-0.1
BEC
a
b
■Typical Switching Characteristics (Common Emitter)
V
CC
(V)
100
RL
(Ω)
50
IC
(A)
2
V
BB2
(V)
–5
I
B2
(mA)
–10
t
on
(µs)
0.6typ
t
stg
(µs)
16.0typ
t
f
(µs)
3.0typ
I
B1
(mA)
5
VBB1
(V)
10
Weight : Approx 2.0g
a. Type No.
b. Lot No.
B
C
(4kΩ)
E