Sanken Electric Co 2SD1796 Datasheet
138
2SD1796
IC–VCE Characteristics
(Typical)
hFE–IC Characteristics
(Typical)
hFE–IC
Temperature Characteristics (Typical)
θj-a
–
t Characteristics
Pc–Ta Derating
0
0
1
2
3
4
2134
Collector-Emitter Voltage V
CE(V)
Collector Current IC(A)
I
B
=20mA
0.3mA
1.0mA
0.4mA
0.5mA
0.8mA
0.6mA
Safe Operating Area (Single Pulse)
fT–IE Characteristics
(Typical)
410.1 0.50.05
50
500
100
1000
10000
20000
5000
Collector Current IC(A)
DC Current åGain hFE
(VCE=4V)
–0.01 –0.1 –1 –4
0
20
40
120
100
60
80
Cut-off Frequency fT(MHZ)
(VCE=10V)
Emitter Current IE(A)
Typ
10
503 5 100
0.05
0.1
1
0.5
10
5
Collector-Emitter Voltage V
CE(V)
Collector Current IC(A)
Without Heatsink
Natural Cooling
DC
100ms
10ms
1ms
0.5
1
5
1 10 100 1000
Time t(ms)
Transient Thermal Resistance θj-a(˚C/W)
Typ
VCB=10V
IE=–2V
VCE(sat)–IB Characteristics
(Typical)
0
3
2
1
0.2 0.5 5 101 10050
Base Current I
B(mA)
Collector-Emitter Saturation Voltage VCE(sat)(V)
I
C
=4A
I
C
=3A
I
C
=2A
I
C
=1A
IC–VBE Temperature Characteristics
(Typical)
021
Base-Emittor Voltage V
BE(V)
Collector Current IC(A)
(VCE=2V)
0
3
4
2
1
125˚C (Case Temp)
25˚C (Case Temp)
–30˚C (Case Temp)
Collector Current IC(A)
DC Current åGain hFE
0.05 0.5 1 40.1
100
50
500
1000
5000
10000
20000
(VCE=4V)
125˚C
25˚C
–30˚C
30
20
10
2
0
0 25 50 75 100 125 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation PC(W)
With Infinite heatsink
Without Heatsink
150x150x2
50x50x2
100x
100x2
Natural Cooling
Silicone Grease
Heatsink: Aluminum
in mm
Silicon NPN Triple Diffused Planar Transistor
Application : Driver for Solenoid, Relay and Motor and General Purpose
Symbol
V
CBO
VCEO
VEBO
IC
IB
PC
Tj
T
stg
2SD1796
60±10
60±10
6
4
0.5
25(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
■
Absolute maximum ratings
■
Electrical Characteristics
2SD1796
10
max
10max
60±10
2000
min
1.5max
60typ
45 typ
Unit
µ
A
mA
V
V
MHz
pF
Conditions
V
CB=50V
V
EB=6V
I
C=10mA
V
CE=4V, IC=3A
I
C=3A, IB=10mA
V
CE=12V, IE=–0.2A
V
CB=10V, f=1MHz
(Ta=25°C)
(Ta=25°C)
Symbol
I
CBO
IEBO
V(BR)CEO
hFE
VCE(sat)
fT
COB
External Dimensions FM20(TO220F)
ø3.3
±0.2
10.1
±0.2
4.0
±0.2
16.9
±0.3
13.0min
8.4
±0.2
0.8
±0.2
3.9
±0.2
2.542.54
1.35
±0.15
0.85
+0.2
-0.1
1.35
±0.15
2.2
±0.2
4.2
±0.2
2.8
c
0.5
2.4
±0.2
0.45
+0.2
-0.1
BEC
a
b
■Typical Switching Characteristics (Common Emitter)
V
CC
(V)
30
RL
(Ω)
10
IC
(A)
3
V
BB2
(V)
–5
I
B2
(mA)
–10
t
on
(µs)
1.0typ
t
stg
(µs)
4.0typ
t
f
(µs)
1.5typ
I
B1
(mA)
10
VBB1
(V)
10
Weight : Approx 2.0g
a. Type No.
b. Lot No.
Built-in Avalanche Diode
for Surge Absorbing
Darlington
Equivalent
circuit
B
(3kΩ)(150Ω)
C
E
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