IC–VCE Characteristics
(Typical)
hFE–IC Characteristics
(Typical)
θj-a
–
t Characteristics
IC–VBE Temperature Characteristics
(Typical)
VCE(sat)–IB Characteristics
(Typical)
Pc–Ta Derating
Safe Operating Area (Single Pulse)
0
3
2
1
0.3 5 101 10050
Base Current I
B(mA)
Collector-Emitter Saturation Voltage VCE(sat)(V)
0
6
8
4
2
021
Base-Emittor Voltage V
BE(V)
Collector Current IC(A)
(VCE=2V)
125˚C (Case Temp)
25˚C (Case Temp)
–30˚C (Case Temp)
0.2
1
10
5
0.5
1 10 10050 10005 5000
Time t(ms)
Transient Thermal Resistance θj-a(˚C/W)
50
40
30
20
10
2
0
0 25 50 75 100 125 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation PC(W)
With Infinite heatsink
Without Heatsink
103 5 20010050
0.08
1
0.5
10
20
5
Collector-Emitter Voltage V
CE(V)
Collector Current IC(A)
Without Heatsink
Natural Cooling
DC
10ms
3ms
1ms
0.03 0.1 1 5 10
80
500
1000
10000
5000
Collector Current IC(A)
DC Current Gain hFE
(VCE=2V)
0
0
2
4
8
6
264
Collector-Emitter Voltage V
CE(V)
Collector Current IC(A)
0.7mA
1.5mA
1mA
2mA
3mA
5mA
10mA
20mA
0.5mA
0.4mA
I
B
=0.3mA
0.5
Typ
500µs
I
C
=6A
2A
4A
Collector Current IC(A)
DC Current Gain hFE
0.03 0.05 0.5 1 5 100.1
100
50
30
500
1000
5000
10000
(VCE=2V)
125˚C
25˚C
–30˚C
fT–IE Characteristics
(Typical)
–0.05 –1–0.5 –8–5
0
50
120
100
Cut-off Frequency fT(MHZ)
(VCE=12V)
Emitter Current I
E(A)
Typ
hFE–IC
Temperature Characteristics (Typical)
Silicon NPN Triple Diffused Planar Transistor
Application : Driver for Solenoid, Relay and Motor, Series Regulator, and General Purpose
Symbol
V
CBO
VCEO
VEBO
IC
IB
PC
Tj
T
stg
2SD1769
120
120
6
6(
Pulse10)
1
50(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
■
Absolute maximum ratings
■
Electrical Characteristics
2SD1769
10
max
20max
120min
2000min
1.5max
2.0max
100typ
typ
Unit
µ
A
mA
V
V
V
MHz
pF
Conditions
V
CB=120V
V
EB=6V
I
C=10mA
V
CE=2V, IC=3A
I
C=3A, IB=3mA
I
C=3A, IB=3mA
V
CE=12V, IE=–0.2A
V
CB=10V, f=1MHz
(Ta=25°C) (Ta=25°C)
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
External Dimensions MT-25(TO220)
BE
2.5 2.5
C
16.0
±0.7
12.0min
4.0max
8.8
±0.2
1.35
0.65
+0.2
-0.1
10.2
±0.2
ø3.75
±0.2
3.0
±0.2
4.8
±0.2
1.4
2.0
±0.1
a
b
■Typical Switching Characteristics (Common Emitter)
V
CC
(V)
30
RL
(Ω)
10
IC
(A)
3
V
BB2
(V)
–1.5
I
B2
(mA)
–3
t
on
(µs)
0.5typ
t
stg
(µs)
5.5typ
t
f
(µs)
1.5typ
I
B1
(mA)
3
VBB1
(V)
10
Weight : Approx 2.6g
a. Type No.
b. Lot No.
B
C
(2.5kΩ)(200Ω)
E