Sanken Electric Co 2SC5287 Datasheet
133
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)
Application : Switching Regulator and General Purpose
Symbol
V
CBO
VCEO
VEBO
IC
IB
PC
Tj
T
stg
2SC5287
900
550
7
5(
Pulse10)
2.5
80(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
■
Absolute maximum ratings
■
Electrical Characteristics
Symbol
I
CBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
2SC5287
100
max
100max
550min
10to25
0.5
max
1.2max
6typ
50typ
Unit
µ
A
µ
A
V
V
V
MHz
pF
Conditions
V
CB=800V
V
EB=7V
I
C=10mA
V
CE=4V, IC=1.8A
I
C=1.8A, IB=0.36A
I
C=1.8A, IB=0.36A
V
CE=12V, IE=–0.35A
V
CB=10V, f=1MHz
2SC5287
(Ta=25°C) (Ta=25°C)
IC–VCE Characteristics
(Typical)
hFE–IC Characteristics
(Typical)
ton•tstg•tf–IC Characteristics
(Typical)
θj-a
–
t Characteristics
IC–VBE Temperature Characteristics
(Typical)
VCE(sat),VBE(sat)–IC Temperature Characteristics (Typical)
Collector-Emitter Saturation Voltage VCE(sat)(V)
Base-Emitter Saturation Voltage VBE(sat)(V)
Pc–Ta Derating
Reverse Bias Safe Operating Area
Safe Operating Area (Single Pulse)
0.03
0.1
0.05
1750.5
0
1.5
1.0
0.5
Collector Current IC(A)
VBE(sat)
VCE(sat)
IC /IB=5 Const.
0
7
5
6
4
3
2
1
0 1.00.5
Base-Emittor Voltage VBE(V)
Collector Current IC(A)
(VCE=4V)
0.02 0.10.05 1 1050.5
4
5
10
40
Collector Current I
C(A)
DC Current Gain hFE
(VCE=4V)
125˚C
25˚C
–55˚C
0.2 10.5 5
0.1
0.5
5
6
1
Switching Time ton•tstg•tf( µs)
Collector Current IC(A)
t
stg
ton
tf
VCC 250V
IC :IB1:IB2=1:0.15:–0.5
0.3
1
3
0.5
1 10 100 1000
Time t(ms)
Transient Thermal Resistance θj-a(˚C/W)
80
60
40
20
3.5
0
0 25 50 75 100 125 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation PC(W)
With Infinite heatsink
Without Heatsink
50 500 1000100
1
5
0.5
0.1
0.03
0.05
20
10
Collector-Emitter Voltage V
CE(V)
Collector Current IC(A)
Without Heatsink
Natural Cooling
IB2=–1.0A
L=3mH
Duty:less than 1%
10 50 100 500
1
0.5
0.03
0.1
0.05
10
20
5
Collector-Emitter Voltage V
CE(V)
Collector Current IC(A)
100µs
50µs
0
0
2
1
5
3
4
2134
Collector-Emitter Voltage V
CE(V)
Collector Current IC(A)
600mA
700mA
400mA
150mA
250mA
I
B
=50mA
Without Heatsink
Natural Cooling
■Typical Switching Characteristics (Common Emitter)
V
CC
(V)
250
RL
(Ω)
139
IC
(A)
1.8
V
BB2
(V)
–5
I
B2
(A)
–0.9
t
on
(µs)
0.7
max
tstg
(µs)
4.0
max
tf
(µs)
0.5
max
IB1
(A)
0.27
VBB1
(V)
10
External Dimensions MT-100(TO3P)
15.6
±0.4
9.6
19.9
±0.3
4.0 2.0
5.0
±0.2
1.8
ø3.2
±0.1
2
3
1.05
+0.2
-0.1
20.0min
4.0max
BE
5.45
±0.1
5.45
±0.1
C
4.8
±0.2
0.65
+0.2
-0.1
1.4
2.0
±0.1
a
b
Weight : Approx 6.0g
a. Type No.
b. Lot No.
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