132
Silicon NPN Triple Diffused Planar Transistor
Application : Resonant Switching Regulator and General Purpose
Symbol
V
CBO
VCEO
VEBO
IC
IB
PC
Tj
T
stg
2SC5271
300
200
7
5(
Pulse10)
2
30(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
■
Absolute maximum ratings
■
Electrical Characteristics
Symbol
I
CBO
IEBO
V(BR)CEO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
COB
2SC5271
100
max
100max
200min
10to30
15
min
1.0max
1.5max
10typ
45typ
Unit
µ
A
µ
A
V
V
V
MHz
pF
Conditions
V
CB=300V
V
EB=7V
I
C=10mA
V
CE=2V, IC=2.5A
V
CE=2V, IC=1mA
I
C=2.5A, IB=0.5A
I
C=2.5A, IB=0.5A
V
CE=12V, IE=–0.5A
V
CB=10V, f=1MHz
2SC5271
(Ta=25°C)
(Ta=25°C)
External Dimensions FM20(TO220F)
ø3.3
±0.2
10.1
±0.2
4.0
±0.2
16.9
±0.3
13.0min
8.4
±0.2
0.8
±0.2
3.9
±0.2
2.542.54
1.35
±0.15
0.85
+0.2
-0.1
1.35
±0.15
2.2
±0.2
4.2
±0.2
2.8
c
0.5
2.4
±0.2
0.45
+0.2
-0.1
BEC
a
b
Weight : Approx 2.0g
a. Type No.
b. Lot No.
■Typical Switching Characteristics (Common Emitter)
V
CC
(V)
150
RL
(Ω)
60
IC
(A)
2.5
V
BB2
(V)
–5
I
B2
(A)
–1.0
t
on
(µs)
0.3
max
tstg
(µs)
1.0
max
tf
(µs)
0.1
max
IB1
(A)
0.5
VBB1
(V)
10