Sanken Electric Co 2SC5124 Datasheet

128

Symbol
V

CBO

VCEO
VEBO
IC
IB
PC
Tj
T

stg

2SC5124

1500

800

6

10(

Pulse20)

5

100(Tc=25°C)

150

–55 to +150

Unit

V
V
V
A
A

W
°C
°C

■

Absolute maximum ratings

2SC5124

(Ta=25°C)

hFE–IC Characteristics

(Typical)

θj-a

–

t Characteristics

IC–VBE Temperature Characteristics

(Typical)

VCE(sat)–IC Characteristics (Typical)

Pc–Ta Derating

0.02 0.1 1 1050.5

3

5

10

40

Collector Current I

C(A)

DC Current Gain hFE

(VCE=5V)

125˚C

25˚C

–55˚C

0

10

2

6

4

8

0 1.00.5

Base-Emittor Voltage V

BE(V)

Collector Current IC(A)

(VCE=5V)

Safe Operating Area (Single Pulse)

5 10 10050 500 1000

0.1

1

0.5

10

30

5

Collector-Emitter Voltage V

CE(V)

Collector Current IC(A)

100

µ

s

100

50

3.5
0

0 25 50 75 100 125 150

Ambient Temperature Ta(˚C)

Maximum Power Dissipation PC(W)

With Infinite heatsink

Without Heatsink

0.02 0.05

0.1 0.5 1 105

0

2

1

3

Collector Current IC(A)

Collector-Emitter Saturation Voltage VCE(sat)(V)

IC/IB=5:1

0.2 10.5 105

0.1

0.5

5

10

1

Switching Time ton•tstg•tf(µs)

Collector Current IC(A)

tstg

tf

VCC 200V
IC :IB1:–IB2=5:1:2

tstg•tf–IC Characteristics

(Typical)

Reverse Bias Safe Operating Area

100 50050 20001000

1

0.5

0.1

10

30

5

Collector-Emitter Voltage VCE(V)

Collector Current IC(A)

Without Heatsink
Natural Cooling
L=3mH
–IB2=1A
Duty:less than 1%

IC–VCE Characteristics

(Typical)

0

0

2

10

4

6

8

2134

Collector-Emitter Voltage V

CE(V)

Collector Current IC(A)

2.4A

700mA

1.2A

1.8A

300mA

I

B

=100mA

External Dimensions FM100(TO3PF)

4.41.5 1.5

BEC

5.45

±0.1

ø3.3

±0.2

1.6

3.3

1.75

0.8

±0.2

2.15

1.05

+0.2

-0.1

5.45

±0.1

23.0

±0.3

16.2

9.5

±0.2

5.5

15.6

±0.2

5.5

±0.2

3.45

3.35

0.65

+0.2

-0.1

±0.2

3.0

0.8

a
b

Weight : Approx 6.5g
a. Type No.
b. Lot No.

■Typical Switching Characteristics (Common Emitter)

V

CC

(V)

200

RL

(Ω)

33.3

IC

(A)

6

V

BB2

(V)

–5

I

B2

(A)

–2.4

t

on

(µs)

0.1typ

t

stg

(µs)

4.0typ

t

f

(µs)

0.2typ

I

B1

(A)

1.2

VBB1

(V)

10

Application : Display Horizontal Deflection Output, Switching Regulator and General Purpose

Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)

■

Electrical Characteristics

Symbol

I

CBO1

ICBO2
IEBO
V(BR)CEO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
COB

2SC5124

100

max

1max
100max
800min

8min

4to9

5

max

1.5max
3typ

130typ

Unit

µ

A

mA

µ

A
V

V
V

MHz

pF

Conditions

V

CB=1200V

V

CB=1500V

V

EB=6V

I

C=10mA

V

CE=5V, IC=1A

V

CE=5V, IC=8A

I

C=8A, IB=2A

I

C=8A, IB=2A

V

CE=12V, IE=–1A

V

CB=10V, f=1MHz

(Ta=25°C)

19.1