127
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1909)
Application : Audio and General Purpose
Symbol
V
CBO
VCEO
VEBO
IC
IB
PC
Tj
T
stg
2SC5101
200
140
6
10
4
80(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
■
Absolute maximum ratings
■
Electrical Characteristics
Symbol
I
CBO
IEBO
V(BR)CEO
hFE
VCE(sat)
fT
COB
2SC5101
10
max
10max
140min
50min∗
0.5
max
20typ
250typ
Unit
µ
A
µ
A
V
V
MHz
pF
Conditions
V
CB=200V
V
EB=6V
I
C=50mA
V
CE=4V, IC=3A
I
C=5A, IB=0.5A
V
CE=12V, IE=–0.5A
V
CB=10V, f=1MHz
2SC5101
(Ta=25°C)
(Ta=25°C)
IC–VCE Characteristics
(Typical)
hFE–IC Characteristics
(Typical)
hFE–IC
Temperature Characteristics (Typical)
θj-a
–
t Characteristics
IC–VBE Temperature Characteristics
(Typical)
VCE(sat)–IB Characteristics
(Typical)
Pc–Ta Derating
Safe Operating Area (Single Pulse)
fT–IE Characteristics
(Typical)
0
3
2
1
0 0.5 1.0 2.01.5
Base Current I
B(A)
Collector-Emitter Saturation Voltage VCE(sat)(V)
IC =10A
5A
0
10
2
6
4
8
021
Base-Emitter Voltage V
BE(V)
Collector Current IC(A)
(VCE=4V)
125˚C (Case Temp)
25˚C (Case Temp)
–30˚C (Case Temp)
0.1
1
3
0.5
1 10 100 1000 2000
Time t(ms)
Transient Thermal Resistance θj-a(˚C/W)
80
60
40
20
3.5
0
05025 75 125100 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation PC(W)
With Infinite heatsink
Without Heatsink
10 503 5 100
200
0.1
1
0.5
10
30
5
Collector-Emitter Voltage V
CE(V)
Collector Current IC(A)
Without Heatsink
Natural Cooling
DC
100ms
10ms
0.02 0.1 0.5 1 5 10
20
50
100
200
Collector Current IC(A)
DC Current Gain hFE
(VCE=4V) (VCE=4V)
Typ
0
0
2
4
6
10
8
2134
Collector-Emitter Voltage V
CE(V)
Collector Current IC(A)
150mA
200mA
100mA
75mA
50mA
20mA
10mA
300mA
I
B
=400mA
0.02 0.5 51
20
50
300
100
0.1 10
Collector Current IC(A)
DC Current Gain hFE
125˚C
25˚C
–30˚C
–0.02 –0.1 –1 –10
0
10
20
40
30
Cut-off Frequency fT(MHZ)
(VCE=12V)
Emitter Current IE(A)
Typ
External Dimensions FM100(TO3PF)
Weight : Approx 6.5g
a. Type No.
b. Lot No.
■Typical Switching Characteristics (Common Emitter)
VCC
(V)
60
R
L
(Ω)
12
I
C
(A)
5
V
BB2
(V)
–5
I
B2
(A)
–0.5
t
on
(µs)
0.24typ
t
stg
(µs)
4.32typ
t
f
(µs)
0.40typ
I
B1
(A)
0.5
VBB1
(V)
10
∗h
FE Rank O(50to100), P(70to140), Y(90to180)
±0.2
9.5
±0.3
23.0
16.2
5.45
±0.1
15.6
a
b
BEC
±0.2
4.41.5 1.5
5.45
1.75
2.15
1.05
±0.2
0.8
ø3.3
1.6
±0.1
±0.2
5.5
±0.2
3.45
5.5
±0.2
3.3
+0.2
-0.1
0.65
3.0
0.8
+0.2
-0.1
3.35