Sanken Electric Co 2SC5099 Datasheet

125

2SC5099

IC–VCE Characteristics

(Typical)

hFE–IC Characteristics

(Typical)

hFE–IC

Temperature Characteristics (Typical)

θj-a

–

t Characteristics

IC–VBE Temperature Characteristics

(Typical)

VCE(sat)–IB Characteristics

(Typical)

Pc–Ta Derating

Safe Operating Area (Single Pulse)

fT–IE Characteristics

(Typical)

0

3

2

1

0 0.5 1.0 1.5

Base Current I

B(A)

Collector-Emitter Saturation Voltage VCE(sat)(V)

IC =6A

2A

4A

0

6

4

2

021

Base-Emittor Voltage VBE(V)

Collector Current IC(A)

(VCE=4V)

125˚C (Case Temp)

25˚C (Case Temp)

–30˚C (Case Temp)

0.3

1

5

0.5

1 10 100 1000 2000

Time t(ms)

Transient Thermal Resistance θj-a(˚C/W)

60

40

20

3.5
0

05025 75 125100 150

Ambient Temperature Ta(˚C)

Maximum Power Dissipation PC(W)

With Infinite heatsink

Without Heatsink

5 10 10050

0.1

1

0.5

10

20

5

Collector-Emitter Voltage VCE(V)

Collector Current IC(A)

Without Heatsink

Natural Cooling

DC

10ms

1ms

100ms

0.02 0.1 1 5 6

30

50

100

300

Collector Current I

C(A)

DC Current Gain hFE

(VCE=4V)

Typ

0

0

2

4

6

2134

Collector-Emitter Voltage V

CE(V)

Collector Current IC(A)

80mA

50mA

30mA

20mA

150mA

100mA

I

B

=10mA

200mA

(VCE=4V)

0.02 0.50.5 651

20

50

200

100

0.1
Collector Current I

C(A)

DC Current Gain hFE

125˚C

25˚C

–30˚C

–0.02 –0.1 –1 –6

0

20

10

40

30

Cut-off Frequency fT(MHZ)

(VCE=12V)

Emitter Current I

E(A)

Typ

Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1907)

Application : Audio and General Purpose

Symbol
V

CBO

VCEO
VEBO
IC
IB
PC
Tj
T

stg

2SC5099

120

80

6
6
3

60(Tc=25°C)

150

–55 to +150

Unit

V
V
V
A
A

W
°C
°C

■

Absolute maximum ratings

■

Electrical Characteristics

Symbol

I

CBO

IEBO
V(BR)CEO
hFE
VCE(sat)
fT
COB

2SC5099

10

max

10max
80min
50min∗

0.5

max

20typ

110typ

Unit

µ

A

µ

A

V

V

MHz

pF

Conditions

V

CB=120V

V

EB=6V

I

C=50mA

V

CE=4V, IC=2A

I

C=2A, IB=0.2A

V

CE=12V, IE=–0.5A

V

CB=10V, f=1MHz

(Ta=25°C) (Ta=25°C)

■Typical Switching Characteristics (Common Emitter)

V

CC

(V)
30

R

L

(Ω)

10

I

C

(A)

3

V

BB2

(V)

–5

I

B2

(A)

–0.3

t

on

(µs)

0.16typ

t

stg

(µs)

2.60typ

t

f

(µs)

0.34typ

I

B1

(A)

0.3

VBB1

(V)
10

External Dimensions FM100(TO3PF)

Weight : Approx 6.5g
a. Type No.
b. Lot No.

∗hFE Rank O(50to100), P(70to140), Y(90to180)

±0.3

23.0

±0.2

9.5

16.2

5.45

±0.1

15.6

a
b

BEC

±0.2

4.41.5 1.5

±0.2

0.8

ø3.3

1.6

1.75

2.15

1.05

±0.1

5.45

±0.2

5.5

±0.2

3.45

5.5

±0.2

3.3

+0.2

-0.1

0.65

3.0

0.8

+0.2

-0.1

3.35