Sanken Electric Co 2SC5071 Datasheet
124
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor)
Application : Switching Regulator and General Purpose
Symbol
V
CBO
VCEO
VEBO
IC
IB
PC
Tj
T
stg
2SC5071
500
400
10
12(
Pulse24)
4
100(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
■
Absolute maximum ratings
■
Electrical Characteristics
Symbol
I
CBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
2SC5071
100
max
100max
400min
10to30
0.5
max
1.3max
10typ
105typ
Unit
µ
A
µ
A
V
V
V
MHz
pF
Conditions
V
CB=500V
V
EB=10V
I
C=25mA
V
CE=4V, IC=7A
I
C=7A, IB=1.4A
I
C=7A, IB=1.4A
V
CE=12V, IE=–1A
V
CB=10V, f=1MHz
2SC5071
(Ta=25°C) (Ta=25°C)
IC–VCE Characteristics
(Typical)
hFE–IC Characteristics
(Typical)
ton•tstg•tf–IC Characteristics
(Typical)
θj-a
–
t Characteristics
IC–VBE Temperature Characteristics
(Typical)
VCE(sat),VBE(sat)–IC Temperature Characteristics (Typical)
Collector-Emitter Saturation Voltage VCE(sat)(V)
Base-Emitter Saturation Voltage VBE(sat)(V)
Pc–Ta Derating
Reverse Bias Safe Operating Area
Safe Operating Area (Single Pulse)
0
0
4
2
6
8
10
12
2134
Collector-Emitter Voltage V
CE(V)
Collector Current IC(A)
600mA
400mA
200mA
800mA
1A
I
B
=100mA
0.02 0.10.05 1 5 100.5
0
1
(IC/IB=5)
Collector Current I
C(A)
VBE(sat)
125˚C (Case Temp)
25˚C (Case Temp)
–55˚C (Case Temp)
25˚C
–55˚C
VCE(sat)
1
2
5
˚
C
(
C
a
s
e
T
e
m
p
)
0
12
10
8
6
4
2
0 1.00.5
Base-Emittor Voltage VBE(V)
Collector Current IC(A)
(VCE=4V)
125˚C (Case Temp)
25˚C (Case Temp)
–55˚C (Case Temp)
0.02 0.10.05 1 101250.5
8
10
40
Collector Current IC(A)
DC Current Gain hFE
(VCE=4V)
125˚C
25˚C
–30˚C
10.5 12105
0.1
0.5
5
1
Switching Time ton•tstg•tf( µs)
Collector Current IC(A)
tstg
ton
tf
VCC 200V
IC :IB1:IB2=10:1:–2
100
50
3.5
0
0 25 50 75 100 125 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation PC(W)
With Infinite heatsink
Without Heatsink
10 505 500100
1
0.5
0.1
10
30
5
Collector-Emitter Voltage VCE(V)
Collector Current IC(A)
Without Heatsink
Natural Cooling
L=3mH
IB2 =1.0A
Duty:less than 1%
10 505 100 500
1
0.5
0.1
10
30
5
Collector-Emitter Voltage VCE(V)
Collector Current IC(A)
100µs
Without Heatsink
Natural Cooling
0.3
1
3
0.5
1 10 100 1000
Time t(ms)
Transient Thermal Resistance θj-a(˚C/W)
■Typical Switching Characteristics (Common Emitter)
V
CC
(V)
200
R
L
(Ω)
28.5
I
C
(A)
7
V
BB2
(V)
–5
I
B2
(A)
–1.4
t
on
(µs)
1.0
max
tstg
(µs)
3.0
max
tf
(µs)
0.5
max
IB1
(A)
0.7
VBB1
(V)
10
External Dimensions MT-100(TO3P)
Weight : Approx 6.0g
a. Type No.
b. Lot No.
±0.3
19.9
20.0min
5.45
±0.4
15.6
9.6
4.0 2.0
a
b
4.0max
±0.1
BE
C
ø3.2
2
3
1.05
5.45
±0.2
4.8
±0.2
1.8
5.0
±0.1
+0.2
-0.1
±0.1
0.65
±0.1
2.0
+0.2
-0.1
1.4
Loading...