IC–VCE Characteristics
(Typical)
hFE–IC Characteristics
(Typical)
hFE–IC
Temperature Characteristics (Typical)
θj-a
–
t Characteristics
IC–VBE Temperature Characteristics
(Typical)
VCE(sat)–IB Characteristics
(Typical)
Pc–Ta Derating
Safe Operating Area (Single Pulse)
fT–IE Characteristics
(Typical)
0
3
2
1
2
105 10050 1000500
Base Current IB(mA)
Collector-Emitter Saturation Voltage VCE(sat)(V)
0.5A
1A
IC =2A
0
2
1
0 1.00.5
Base-Emittor Voltage V
BE(V)
Collector Current IC(A)
(VCE=4V)
125˚C (Case Temp)
25˚C (Case Temp)
–55˚C (Case Temp)
1
7
5
1 10 100 1000 2000
Time t(ms)
Transient Thermal Resistance θj-a(˚C/W)
20
10
2
0
0 25 50 75 100 125 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation PC(W)
With Infinite heatsink
Without Heatsink
10 505 100 200
0.01
0.1
0.5
1
1
5
0.5
Collector-Emitter Voltage V
CE(V)
Collector Current IC(A)
Without Heatsink
Natural Cooling
1.2SC4883
2.2SC4883A
DC
100ms
10ms
1ms
1
2
0.01 0.1 0.50.05 1 2
50
40
100
300
Collector Current I
C(A)
DC Current Gain hFE
(VCE=4V)
Typ
0
0
1
2
462810
Collector-Emitter Voltage V
CE(V)
Collector Current IC(A)
30mA
15mA
10mA
I
B
=5mA
100mA
60mA
(VCE=4V)
0.01 0.05 0.5 2
30
50
300
100
0.1
Collector Current I
C(A)
DC Current Gain hFE
1
125˚C
25˚C
–55˚C
–0.01 –0.1 –1 –2
0
60
80
100
120
140
40
20
160
Cut-off Frequency fT(MHZ)
(VCE=12V)
Emitter Current IE(A)
Typ
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1859/A)
Application : Audio Output Driver and TV Velocity-modulation
External Dimensions FM20(TO220F)
Weight : Approx 2.0g
a. Type No.
b. Lot No.
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
T
stg
6
2
1
20(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
■
Absolute maximum ratings
■
Electrical Characteristics
Symbol
I
CBO
IEBO
V(BR)CEO
hFE
VCE(sat)
fT
COB
2SC4883
150
150
min
Unit
µ
A
V
µ
A
V
V
MHz
pF
Conditions
V
CB=
V
EB=6V
I
C=10mA
V
CE=10V, IC=0.7A
I
C=0.7A, IB=70mA
V
CE=12V, IE=–0.7A
V
CB=10V, f=1MHz
(Ta=25°C)
(Ta=25°C)
2SC4883A
180
180
2SC4883
150
150
2SC4883A
180
180
min
10max
60to240
1.0
max
120typ
30typ
■Typical Switching Characteristics (Common Emitter)
VCC
(V)
20
R
L
(Ω)
20
IC
(A)
1
VBB2
(V)
–5
I
B2
(mA)
–100
t
on
(µs)
0.5
typ
tstg
(µs)
1.5
typ
tf
(µs)
0.5
typ
IB1
(mA)
100
VBB1
(V)
10
10max
±0.2
10.1
±0.3
16.9
±0.2
8.4
a
b
13.0min
BEC
±0.2
4.0
ø3.3
±0.2
0.8
±0.2
3.9
±0.15
1.35
±0.15
1.35
+0.2
0.85
-0.1
2.542.54
±0.2
2.2
4.2
2.8
±0.2
+0.2
0.45
-0.1
±0.2
c
0.5
±0.2
2.4