Sanken Electric Co 2SC4706 Datasheet

117

Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)

Application : Switching Regulator and General Purpose

Symbol
V

CBO

VCEO
VEBO
IC
IB
PC
Tj
T

stg

2SC4706

900
600

7

14(

Pulse28)

7

130(Tc=25°C)

150

–55to+150

Unit

V
V
V
A
A

W
°C
°C

■

Absolute maximum ratings

■

Electrical Characteristics

Symbol

I

CBO

IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB

2SC4706

100

max

100max
600min
10to25

0.5

max

1.2max
6typ

160typ

Unit

µ

A

µ

A

V

V
V

MHz

pF

Conditions

V

CB=800V

V

EB=7V

I

C=10mA

V

CE=4V, IC=7A

I

C=7A, IB=1.4A

I

C=7A, IB=1.4A

V

CE=12V, IE=–1.5A

V

CB=10V, f=1MHz

2SC4706

(Ta=25°C) (Ta=25°C)

IC–VCE Characteristics

(Typical)

hFE–IC Temperature Characteristics (Typical)

ton•tstg•tf–IC Characteristics

(Typical)

θj-a

–

t Characteristics

IC–VBE Temperature Characteristics

(Typical)

VCE(sat),VBE(sat)–IC Temperature Characteristics (Typical)

Pc–Ta Derating

Reverse Bias Safe Operating Area

Safe Operating Area (Single Pulse)

0

0

2

4

6

8

12

10

14

2134

Collector-Emitter Voltage V

CE(V)

Collector Current IC(A)

600mA

800mA

1.2A

400mA

200mA

IB=100mA

1.6A

Collector-Emitter Saturation Voltage VCE(sat)(V)

Base-Emitter Saturation Voltage VBE(sat)(V)

0.02

0.1

0.05

11050.5

0

2

1

Collector Current IC(A)

VBE(sat)

VCE(sat)

IC /IB=5 Const.

10.2 0.5 10 145

0.1

0.5

5

8

1

Switching Time ton•tstg•tf( µs)

Collector Current IC(A)

tstg

ton

tf

VCC 250V
IC :IB1:–IB2=10:1.5:5

130

100

50

3.5
0

Ambient Temperature Ta(˚C)

Maximum Power Dissipation PC(W)

With Infinite heatsink

Without Heatsink

0 25 50 75 100 125 150

100 50050 1000

1

0.5

0.1

10

50

5

Collector-Emitter Voltage V

CE(V)

Collector Current IC(A)

Without Heatsink
Natural Cooling
L=3mH
IB2=–1.0A
Duty:less than 1%

10 50 100 500 1000

10

1

0.5

0.1

50

Collector-Emitter Voltage VCE(V)

Collector Current IC(A)

Without Heatsink

Natural Cooling

100µs

0

14

12

10

4

2

8

6

0 1.20.4 0.6 0.8 1.00.2

Base-Emittor Voltage V

BE(V)

Collector Current IC(A)

(VCE=4V)

125˚C (Case Temp)

–55˚C (Case Temp)

25˚C (Case Temp)

0.02 0.10.05 1 141050.5

5

10

50

Collector Current IC(A)

DC Current Gain hFE

(VCE=4V)

125˚C

25˚C

–55˚C

■Typical Switching Characteristics (Common Emitter)

V

CC

(V)

250

RL

(Ω)

35.7

IC

(A)

7

V

BB2

(V)
–5

I

B2

(A)

–3.5

ton

(µs)

1

max

tstg

(µs)

5

max

tf

(µs)

0.7

max

IB1
(A)

1.05

VBB1

(V)
10

External Dimensions MT-100(TO3P)

15.6

±0.4

9.6

19.9

±0.3

4.0 2.0

5.0

±0.2

1.8

ø3.2

±0.1

2

3

1.05

+0.2

-0.1

20.0min

4.0max

BE

5.45

±0.1

5.45

±0.1

C

4.8

±0.2

0.65

+0.2

-0.1

1.4

2.0

±0.1

a
b

Weight : Approx 6.0g
a. Type No.
b. Lot No.