Sanken Electric Co 2SC4495 Datasheet
109
Silicon NPN Triple Diffused Planar Transistor
Application : Audio Temperature Compensation and General Purpose
Symbol
V
CBO
VCEO
VEBO
IC
IB
PC
Tj
T
stg
2SC4495
80
50
6
3
1
25(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
■
Absolute maximum ratings
■
Electrical Characteristics
Symbol
I
CBO
IEBO
V(BR)CEO
hFE
VCE(sat)
fT
COB
2SC4495
10
max
10max
50min
500min
0.5max
40typ
30typ
Unit
µ
A
µ
A
V
V
MHz
pF
Conditions
V
CB=80V
V
EB=6V
I
C=25mA
V
CE=4V, IC=0.5A
I
C=1A, IB=20mA
V
CE=12V, IE=–0.1A
V
CB=10V,f=1MHz
2SC4495
(Ta=25°C) (Ta=25°C)
IC–VCE Characteristics
(Typical)
hFE–IC Characteristics
(Typical)
hFE–IC
Temperature Characteristics (Typical)
θj-a
–
t Characteristics
IC–VBE Temperature Characteristics
(Typical)
VCE(sat)–IB Characteristics
(Typical)
Pc–Ta Derating
0
0
1
2
3
21 3456
Collector-Emitter Voltage V
CE(V)
Collector Current IC(A)
30mA
I
B
=0.5mA
18mA
12mA
1mA
2mA
3mA
8mA
5mA
Safe Operating Area (Single Pulse)
fT–IE Characteristics
(Typical)
0
1.5
0.5
1
1001 10 1000
Base Current IB(mA)
Collector-Emitter Saturation Voltage VCE(sat)(V)
I
C
=1A
2A
3A
310.1 0.50.01
100
500
1000
3000
Collector Current IC(A)
DC Current Gain hFE
(VCE=4V)
Typ
–0.005
–0.01
–0.1 –1
0
20
40
60
Cut-off Frequency fT(MHZ)
(VCE=12V)
Emitter Current IE(A)
Typ
10
503 5 100
0.05
0.1
1
0.5
10
5
Collector-Emitter Voltage V
CE(V)
Collector Current IC(A)
Without Heatsink
Natural Cooling
DC
100ms
10ms
1ms
30
20
10
2
0
0 25 50 75 100 125 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation PC(W)
With Infinite heatsink
Without Heatsink
150x150x2
50x50x2
100x
100x2
0
3
2.5
0.5
1.5
1
2
0 1.510.5
Base-Emittor Voltage V
BE(V)
Collector Current IC(A)
(VCE=4V)
125˚C (Case Temp)
25˚C (Case Temp)
–55˚C (Case Temp)
Collector Current IC(A)
DC Current Gain hFE
1
7
5
1 10 100 1000 2000
Time t(ms)
Transient Thermal Resistance θj-a(˚C/W)
310.1 0.50.01
20
100
50
500
1000
5000
(VCE=4V)
125˚C
–55˚C
25˚C
Natural Cooling
Silicone Grease
Heatsink: Aluminum
in mm
■Typical Switching Characteristics (Common Emitter)
V
CC
(V)
20
R
L
(Ω)
20
I
C
(A)
1
V
BB2
(V)
–5
I
B2
(mA)
–30
t
on
(µs)
0.45
typ
tstg
(µs)
1.60
typ
tf
(µs)
0.85
typ
IB1
(mA)
15
VBB1
(V)
10
External Dimensions FM20(TO220F)
ø3.3
±0.2
10.1
±0.2
4.0
±0.2
16.9
±0.3
13.0min
8.4
±0.2
0.8
±0.2
3.9
±0.2
2.542.54
1.35
±0.15
0.85
+0.2
-0.1
1.35
±0.15
2.2
±0.2
4.2
±0.2
2.8
c
0.5
2.4
±0.2
0.45
+0.2
-0.1
BEC
a
b
Weight : Approx 2.0g
a. Type No.
b. Lot No.
High hFE
L
OW VCE (sat)
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