Sanken Electric Co 2SC4467 Datasheet

107

Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1694)

Application : Audio and General Purpose

Symbol V

CBO

VCEO VEBO IC IB PC Tj T

stg

2SC4467

160 120

6 8 3

80(Tc=25°C)

150

–55 to +150

Unit

V V V A A

W °C °C

■

Absolute maximum ratings

■

Electrical Characteristics

Symbol

I

CBO

IEBO V(BR)CEO hFE VCE(sat) fT COB

2SC4467

10

max

10max

120min

50min∗

1.5

max

20typ

200typ

Unit

µ

A

µ

A

V

V

MHz

pF

Conditions

V

CB=160V

V

EB=6V

I

C=50mA

V

CE=4V, IC=3A

I

C=3A, IB=0.3A

V

CE=12V, IE=–0.5A

V

CB=10V, f=1MHz

2SC4467

(Ta=25°C) (Ta=25°C)

IC–VCE Characteristics

(Typical)

hFE–IC Characteristics

(Typical)

hFE–IC

Temperature Characteristics (Typical)

θj-a

–

t Characteristics

IC–VBE Temperature Characteristics

(Typical)

VCE(sat)–IB Characteristics

(Typical)

Pc–Ta Derating

Safe Operating Area (Single Pulse)

fT–IE Characteristics

(Typical)

0

3

2

1

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

Base Current I

B(A)

Collector-Emitter Saturation Voltage VCE(sat)(V)

IC =8A

2A

4A

0

8

6

2

4

0 1.51.00.5

Base-Emittor Voltage V

BE(V)

Collector Current IC(A)

(VCE=4V)

125˚C (Case Temp)

25˚C (Case Temp)

–30˚C (Case Temp)

80

60

40

20

3.5 0

0 25 50 75 100 125 150

Ambient Temperature Ta(˚C)

Maximum Power Dissipation PC(W)

With Infinite heatsink

Without Heatsink

10

505 100 200

0.1

1

0.5

10

20

5

Collector-Emitter Voltage VCE(V)

Collector Current IC(A)

Without Heatsink

Natural Cooling

DC

100ms

10ms

0.02 0.1 0.5 1 5 8

20

50

100

200

Collector Current IC(A)

DC Current Gain hFE

(VCE=4V)

Typ

0

0

2

4

6

8

2134

Collector-Emitter Voltage VCE(V)

Collector Current IC(A)

100mA

150mA

200mA

350mA

75mA

50mA

20mA

I

B

=10mA

(VCE=4V)

0.02 0.5 5 81

20

50

200

100

0.1 Collector Current I

C(A)

DC Current Gain hFE

125˚C

25˚C

–30˚C

–0.02 –0.1 –1 –8

0

10

20

40

30

Cut-off Frequency fT(MHZ)

(VCE=12V)

Emitter Current IE(A)

Typ

0.3

1

3

0.5

1 10 100 1000

Time t(ms)

Transient Thermal Resistance θj-a(˚C/W)

■Typical Switching Characteristics (Common Emitter)

V

CC

(V)

40

R

L

(Ω) 10

I

C

(A)

4

V

BB2

(V) –5

I

B2

(A)

–0.4

t

on

(µs)

0.13

typ

tstg

(µs)

3.50

typ

tf

(µs)

0.32

typ

IB1 (A)

0.4

VBB1

(V) 10

External Dimensions MT-100(TO3P)

15.6

±0.4

9.6

19.9

±0.3

4.0 2.0

5.0

±0.2

1.8

ø3.2

±0.1

2

3

1.05

+0.2

-0.1

20.0min

4.0max

BE

5.45

±0.1

5.45

±0.1

C

4.8

±0.2

0.65

+0.2

-0.1

1.4

2.0

±0.1

a b

Weight : Approx 6.0g a. Type No. b. Lot No.

∗h

FE Rank O(50to100), P(70to140), Y(90to180)

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