Sanken Electric Co 2SC4388 Datasheet

102

Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1673)

Application : Audio and General Purpose

Symbol
V

CBO

VCEO
VEBO
IC
IB
PC
Tj
T

stg

2SC4388

200
180

6

15

4

85(Tc=25°C)

150

–55 to +150

Unit

V
V
V
A
A

W
°C
°C

■

Absolute maximum ratings

■

Electrical Characteristics

Symbol

I

CBO

IEBO
V(BR)CEO
hFE
VCE(sat)
fT
COB

2SC4388

10

max

10max

180min

50min∗

2.0

max

20typ

300typ

Unit

µ

A

µ

A

V

V

MHz

pF

Conditions

V

CB=200V

V

EB=6V

I

C=50mA

V

CE=4V, IC=3A

I

C=5A, IB=0.5A

V

CE=12V, IE=–0.5A

V

CB=10V, f=1MHz

2SC4388

(Ta=25°C)

(Ta=25°C)

IC–VCE Characteristics

(Typical)

hFE–IC Characteristics

(Typical)

hFE–IC

Temperature Characteristics (Typical)

θj-a

–

t Characteristics

IC–VBE Temperature Characteristics

(Typical)

VCE(sat)–IB Characteristics

(Typical)

Pc–Ta Derating

Safe Operating Area (Single Pulse)

fT–IE Characteristics

(Typical)

0

3

2

1

0 0.5 1.0 2.01.5

Base Current I

B(A)

Collector-Emitter Saturation Voltage VCE(sat)(V)

IC =10A

5A

Collector Current IC(A)

0

15

10

5

021

Base-Emittor Voltage V

BE(V)

(V

CE=4V)

125˚C (Case Temp)

25˚C (Case Temp)

–30˚C (Case Temp)

0.1

1

3

0.5

1 10 100 1000 2000

Time t(ms)

Transient Thermal Resistance θj-a(˚C/W)

10 5053 100 200

0.05

1

0.5

0.1

10

40

5

Collector-Emitter Voltage V

CE(V)

Collector Current IC(A)

Without Heatsink

Natural Cooling

DC

100ms

10ms

0.02 0.1 1 100.5 5 15

20

50

100

300

Collector Current IC(A)

DC Current Gain hFE

(VCE=4V)

Typ

0

0

5

15

10

2134

Collector-Emitter Voltage V

CE(V)

Collector Current IC(A)

50mA

I

B

=20mA

(VCE=4V)

0.02 0.5 51

20

50

200

100

0.1 10 15
Collector Current I

C(A)

DC Current Gain hFE

125˚C

25˚C

–30˚C

–0.02 –0.1 –1 –10

0

10

20

30

Cut-off Frequency fT(MHZ)

(VCE=12V)

Emitter Current IE(A)

Typ

1A

700mA

500mA

300mA

200mA

100mA

100

80

60

40

20

3.5
0

Ambient Temperature Ta(˚C)

Maximum Power Dissipation PC(W)

With Infinite heatsink

Without Heatsink

0 25 50 75 100 125 150

External Dimensions FM100(TO3PF)

4.41.5 1.5

BEC

5.45

±0.1

ø3.3

±0.2

1.6

3.3

1.75

0.8

±0.2

2.15

1.05

+0.2

-0.1

5.45

±0.1

23.0

±0.3

16.2

9.5

±0.2

5.5

15.6

±0.2

5.5

±0.2

3.45

3.35

0.65

+0.2

-0.1

±0.2

3.0

0.8

a
b

Weight : Approx 6.5g
a. Type No.
b. Lot No.

■Typical Switching Characteristics (Common Emitter)

V

CC

(V)
40

R

L

(Ω)

4

IC

(A)
10

V

BB2

(V)
–5

IB2
(A)

–1

t

on

(µs)

0.5

max

tstg

(µs)

1.8

max

tf

(µs)

0.6

max

IB1
(A)

1

VBB1

(V)
10

∗h

FE Rank O(50to100), P(70to140), Y(90to180)