Sanken Electric Co 2SC4298 Datasheet
96
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor)
Application : Switching Regulator and General Purpose
Symbol
V
CBO
VCEO
VEBO
IC
IB
PC
Tj
T
stg
2SC4298
500
400
10
15(
Pulse30)
5
80(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
■
Absolute maximum ratings
■
Electrical Characteristics
Symbol
I
CBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
2SC4298
100
max
100max
400min
10to30
0.5
max
1.3max
10typ
85typ
Unit
µ
A
µ
A
V
V
V
MHz
pF
Conditions
V
CB=500V
V
EB=10V
I
C=25mA
V
CE=4V, IC=8A
I
C=8A, IB=1.6A
I
C=8A, IB=1.6A
V
CE=12V, IE=–1.5A
V
CB=10V, f=1MHz
2SC4298
(Ta=25°C) (Ta=25°C)
IC–VCE Characteristics
(Typical)
hFE–IC Characteristics
(Typical)
ton•tstg•tf–IC Characteristics
(Typical)
θj-a
–
t Characteristics
VCE(sat),VBE(sat)–IC Temperature Characteristics (Typical)
Pc–Ta Derating
Reverse Bias Safe Operating Area
Safe Operating Area (Single Pulse)
0.1
0.050.03
1 5 10 200.5
0
1.5
0.5
1.0
(IC/IB=5)
Collector Current I
C(A)
VBE(sat)
125˚C (Case Temp)
25˚C (Case Temp)
–55˚C (Case Temp)
25˚C
–55˚C
VCE(sat)
1
2
5
˚
C
(
C
a
s
e
T
e
m
p
)
10.5 10 155
0.1
0.5
5
8
1
Switching Time ton•tstg•tf( µs)
Collector Current IC(A)
tstg
ton
tf
VCC 200V
IC :IB1:IB2=10:1:–2
0.1
1
2
0.5
1 10 100 1000
Time t(ms)
Transient Thermal Resistance θj-a(˚C/W)
80
60
40
20
3.5
0
0 25 50 75 100 125 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation PC(W)
With Infinite heatsink
Without Heatsink
10 505 500100
1
10
50
5
Collector-Emitter Voltage V
CE(V)
Collector Current IC(A)
Without Heatsink
Natural Cooling
L=3mH
IB2=–1A
Duty:less than 1%
10 505 100 500
1
5
10
50
Collector-Emitter Voltage VCE(V)
Collector Current IC(A)
Without Heatsink
Natural Cooling
100µs
Collector-Emitter Saturation Voltage VCE(sat)(V)
Base-Emitter Saturation Voltage VBE(sat)(V)
IC–VBE Temperature Characteristics
(Typical)
0
10
4
2
8
6
0 1.20.4 0.6 0.8 1.00.2
Base-Emittor Voltage VBE(V)
Collector Current IC(A)
(VCE=4V)
125˚C (Case Temp)
–55˚C (Case Temp)
25˚C (Case Temp)
0.02 0.10.05 1 151050.5
5
10
50
Collector Current IC(A)
DC Current Gain hFE
(VCE=4V)
125˚C
25˚C
–55˚C
0
0
15
5
10
2134
Collector-Emitter Voltage V
CE(V)
Collector Current IC(A)
1.2A
1.5A
600mA
800mA
400mA
200mA
I
B
=100mA
■Typical Switching Characteristics (Common Emitter)
VCC
(V)
200
RL
(Ω)
25
IC
(A)
8
V
BB2
(V)
–5
I
B2
(A)
–1.6
t
on
(µs)
1
max
tstg
(µs)
3
max
tf
(µs)
0.5
max
IB1
(A)
0.8
VBB1
(V)
10
External Dimensions FM100(TO3PF)
4.41.5 1.5
BEC
5.45
±0.1
ø3.3
±0.2
1.6
3.3
1.75
0.8
±0.2
2.15
1.05
+0.2
-0.1
5.45
±0.1
23.0
±0.3
16.2
9.5
±0.2
5.5
15.6
±0.2
5.5
±0.2
3.45
3.35
0.65
+0.2
-0.1
±0.2
3.0
0.8
a
b
Weight : Approx 6.5g
a. Type No.
b. Lot No.
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