Sanken Electric Co 2SC4140 Datasheet
92
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor)
Application : Switching Regulator and General Purpose
Symbol
V
CBO
VCEO
VEBO
IC
IB
PC
Tj
T
stg
2SC4140
500
400
10
18(
Pulse36)
6
130(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
■
Absolute maximum ratings
■
Electrical Characteristics
Symbol
I
CBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
2SC4140
100
max
100max
400min
10to30
0.5
max
1.3max
10typ
165typ
Unit
µ
A
µ
A
V
V
V
MHz
pF
Conditions
V
CB=500V
V
EB=10V
I
C=25mA
V
CE=4V, IC=10A
I
C=10A, IB=2A
I
C=10A, IB=2A
V
CE=12V, IE=–2.0A
V
CB=10V, f=1MHz
2SC4140
(Ta=25°C) (Ta=25°C)
IC–VCE Characteristics
(Typical)
hFE–IC Characteristics
(Typical)
ton•tstg•tf–IC Characteristics
(Typical)
θj-a
–
t Characteristics
IC–VBE Temperature Characteristics
(Typical)
VCE(sat),VBE(sat)–IC Temperature Characteristics (Typical)
Pc–Ta Derating
Reverse Bias Safe Operating Area
Safe Operating Area (Single Pulse)
0
0
8
4
12
16
18
2134
Collector-Emitter Voltage V
CE(V)
Collector Current IC(A)
800mA
1.2A
600mA
400mA
200mA
1.6A
I
B
=100mA
0.02 0.10.05 1 5 10 180.5
0
1
1.4
Collector-Emitter Saturation Voltage VCE(sat)(V)
Base-Emitter Saturation Voltage VBE(sat)(V)
(IC/IB=5)
Collector Current I
C(A)
VBE(sat)
125˚C (Case Temp)
25˚C (Case Temp)
–55˚C (Case Temp)
25˚C
–55˚C
VCE(sat)
1
2
5
˚
C
(
C
a
s
e
T
e
m
p
)
10.2 0.5 10 185
0.1
0.5
5
10
1
Switching Time ton•tstg•tf( µs)
Collector Current IC(A)
tstg
ton
tf
VCC 200V
IC :IB1:–IB2=10:1:2
0.1
1
2
0.5
1 10 100 1000
Time t(ms)
Transient Thermal Resistance θj-a(˚C/W)
130
100
50
3.5
0
Ambient Temperature Ta(˚C)
Maximum Power Dissipation PC(W)
With Infinite heatsink
Without Heatsink
0 25 50 75 100 125 150
10 505 500100
1
0.5
0.03
0.1
0.05
10
50
5
Collector-Emitter Voltage V
CE(V)
Collector Current IC(A)
Without Heatsink
Natural Cooling
L=3mH
IB2=–0.5A
Duty:less than 1%
10 505 100 500
0.05
0.03
5
1
0.5
0.1
10
50
Collector-Emitter Voltage V
CE(V)
Collector Current IC(A)
Without Heatsink
Natural Cooling
100µs
10ms
1ms
DC
0.02 0.10.05 1 181050.5
5
10
50
Collector Current IC(A)
DC Current Gain hFE
(VCE=4V)
125˚C
25˚C
–55˚C
0
18
8
4
16
12
0 1.20.4 0.6 0.8 1.00.2
Base-Emittor Voltage V
BE(V)
Collector Current IC(A)
(VCE=4V)
125˚C (Case Temp)
–55˚C (Case Temp)
25˚C (Case Temp)
■Typical Switching Characteristics (Common Emitter)
V
CC
(V)
200
R
L
(Ω)
20
I
C
(A)
10
V
BB2
(V)
–5
I
B2
(A)
–2
t
on
(µs)
1
max
tstg
(µs)
3
max
tf
(µs)
0.5
max
IB1
(A)
1
VBB1
(V)
10
External Dimensions MT-100(TO3P)
15.6
±0.4
9.6
19.9
±0.3
4.0 2.0
5.0
±0.2
1.8
ø3.2
±0.1
2
3
1.05
+0.2
-0.1
20.0min
4.0max
BE
5.45
±0.1
5.45
±0.1
C
4.8
±0.2
0.65
+0.2
-0.1
1.4
2.0
±0.1
a
b
Weight : Approx 6.0g
a. Type No.
b. Lot No.
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