Sanken Electric Co 2SC4130 Datasheet
88
Silicon NPN Epitaxial Planar Transistor (High Voltage and High Speed Switchihg Transistor)
Application : Switching Regulator and General Purpose
Symbol
V
CBO
VCEO
VEBO
IC
IB
PC
Tj
T
stg
2SC4130
500
400
10
7(
Pulse14)
2
30(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
■
Absolute maximum ratings
■
Electrical Characteristics
Symbol
I
CBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
2SC4130
100
max
100max
400min
10to30
0.5
max
1.3max
15typ
50typ
Unit
µ
A
µ
A
V
V
V
MHz
pF
Conditions
V
CB=500V
V
EB=10V
I
C=25mA
V
CE=4V, IC=3A
I
C=3A, IB=0.6A
I
C=3A, IB=0.6A
V
CE=12V, IE=–0.5A
V
CB=10V, f=1MHz
2SC4130
(Ta=25°C)
(Ta=25°C)
IC–VCE Characteristics
(Typical)
hFE–IC Characteristics
(Typical)
ton•tstg•tf–IC Characteristics
(Typical)
θj-a
–
t Characteristics
IC–VBE Temperature Characteristics
(Typical)
VCE(sat),VBE(sat)–IC Temperature Characteristics (Typical)
Collector-Emitter Saturation Voltage VCE(sat)(V)
Base-Emitter Saturation Voltage VBE(sat)(V)
Pc–Ta Derating
Reverse Bias Safe Operating Area
Safe Operating Area (Single Pulse)
0
0
4
2
6
7
2134
Collector-Emitter Voltage V
CE(V)
Collector Current IC(A)
400mA
600mA
1000mA
200mA
100mA
50mA
I
B
=1400mA
0.02
0.1
0.05
1570.5
0
2
1
(IC/IB=5)
Collector Current I
C(A)
VBE(sat)
125˚C (Case Temp)
25˚C (Case Temp)
–55˚C (Case Temp)
25˚C
–55˚C
VCE(sat)
1
2
5
˚
C
(
C
a
s
e
T
e
m
p
)
0.2 10.5 75
0.1
0.5
5
1
Switching Time ton•tstg•tf( µs)
Collector Current IC(A)
tstg
ton
tf
VCC 200V
IC :IB1:–IB2=10:1:2
0.3
1
4
0.5
1 10 100 1000
Time t(ms)
Transient Thermal Resistance θj-a(˚C/W)
30
20
10
2
0
0 25 50 75 100 125 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation PC(W)
With Infinite heatsink
Without Heatsink
10 5052 500100
1
0.5
0.1
0.01
0.05
10
20
5
Collector-Emitter Voltage V
CE(V)
Collector Current IC(A)
Without Heatsink
Natural Cooling
L=3mH
IB2=–0.5A
Duty:less than 1%
10 5052 100 500
0.05
0.01
1
0.5
0.1
10
20
5
Collector-Emitter Voltage V
CE(V)
Collector Current IC(A)
Without Heatsink
Natural Cooling
DC
10ms
100µs
1ms
0.02 0.10.05 1 750.5
2
5
10
50
Collector Current IC(A)
DC Current Gain hFE
(VCE=4V)
125˚C
25˚C
–55˚C
0
7
2
4
6
0 1.20.4 0.6 0.8 1.00.2
Base-Emittor Voltage VBE(V)
Collector Current IC(A)
(VCE=4V)
125˚C (Case Temp)
25˚C (Case Temp)
–55˚C (Case Temp)
■Typical Switching Characteristics (Common Emitter)
VCC
(V)
200
RL
(Ω)
67
I
C
(A)
3
V
BB2
(V)
–5
I
B2
(A)
–0.6
t
on
(µs)
1
max
tstg
(µs)
2.2
max
tf
(µs)
0.5
max
IB1
(A)
0.3
VBB1
(V)
10
External Dimensions FM20(TO220F)
ø3.3
±0.2
10.1
±0.2
4.0
±0.2
16.9
±0.3
13.0min
8.4
±0.2
0.8
±0.2
3.9
±0.2
2.542.54
1.35
±0.15
0.85
+0.2
-0.1
1.35
±0.15
2.2
±0.2
4.2
±0.2
2.8
c
0.5
2.4
±0.2
0.45
+0.2
-0.1
BEC
a
b
Weight : Approx 2.0g
a. Type No.
b. Lot No.
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