86
2SC4065
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1568)
Symbol
V
CBO
VCEO
VEBO
IC
IB
PC
Tj
T
stg
2SC4065
60
60
6
±
12
3
35(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
■
Absolute maximum ratings
■
Electrical Characteristics
Symbol
I
CBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VFEC
fT
COB
2SC4065
100
max
60max
60min
50min
0.35max
2.5max
24typ
180typ
Unit
µ
A
mA
V
V
V
MHz
PF
Conditions
V
CB=60V
V
EB=6V
I
C=25mA
V
CE=1V, IC=6A
I
C=6A, IB=1.3A
V
ECO=10A
V
CE=12V, IE=–0.5A
V
CB=10V, f=1MHz
(Ta=25°C) (Ta=25°C)
IC–VCE Characteristics
(Typical)
hFE–IC Characteristics
(Typical)
hFE–IC
Temperature Characteristics (Typical)
θj-a
–
t Characteristics
IC–VBE Temperature Characteristics
(Typical)
VCE(sat)–IB Characteristics
(Typical)
Pc–Ta Derating
0
0
4
2
8
6
12
10
246
Collector-Emitter Voltage V
CE(V)
Collector Current IC(A)
200mA
I
B
=10mA
20mA
40mA
60mA
100mA
150mA
Safe Operating Area (Single Pulse)
fT–IE Characteristics
(Typical)
0
1.0
1.3
0.5
0.005
0.01
0.1 31
Base Current IB(A)
Collector-Emitter Saturation Voltage VCE(sat)(V)
I
C
=1A
12A
3A
6A
9A
0.02 0.1 1 10 12
3
5
50
10
100
400
Collector Current IC(A)
DC Current Gain hFE
(VCE=1V)
Typ
0.02 0.1 1 10 12
3
5
50
10
100
400
Collector Current IC(A)
DC Current Gain hFE
(VCE=1V)
0.2
0.5
1
5
1 10 100 1000
Time t(ms)
Transient Thermal Resistance θj-a(˚C/W)
10
503 5 100
0.05
0.1
1
0.5
30
10
5
Collector-Emitter Voltage VCE(V)
Collector Current IC(A)
Without Heatsink
Natural Cooling
DC
100ms
10ms
1ms
40
30
20
10
2
0
0 25 50 75 100 125 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation PC(W)
With Infinite heatsink
Without Heatsink
50x50x2
100x100x2
150x150x2
0
12
10
2
4
8
6
0 1.1
1.00.5
Base-Emittor Voltage VBE(V)
Collector Current IC(A)
(VCE=1V)
125˚C (Case Temp)
25˚C (Case Temp)
–30˚C (Case Temp)
25˚C
–30˚C
125˚C
–0.05
–0.1 –1–0.5 –5 –12–10
20
10
0
30
Cut-off Frequency fT(MHZ)
(VCE=12V)
Emitter Current I
E(A)
Typ
Natural Cooling
Silicone Grease
Heatsink: Aluminum
in mm
External Dimensions FM20(TO220F)
ø3.3
±0.2
10.1
±0.2
4.0
±0.2
16.9
±0.3
13.0min
8.4
±0.2
0.8
±0.2
3.9
±0.2
2.542.54
1.35
±0.15
0.85
+0.2
-0.1
1.35
±0.15
2.2
±0.2
4.2
±0.2
2.8
c
0.5
2.4
±0.2
0.45
+0.2
-0.1
BEC
a
b
Weight : Approx 2.0g
a. Type No.
b. Lot No.
Application : DC Motor Driver and General Purpose
■Typical Switching Characteristics (Common Emitter)
V
CC
(V)
24
R
L
(Ω)
4
I
C
(A)
6
V
BB2
(V)
–5
I
B2
(A)
–0.12
t
on
(µs)
0.6
typ
tstg
(µs)
1.4
typ
tf
(µs)
0.4
typ
IB1
(A)
0.12
VBB1
(V)
10
Built-in Diode at C–E
Low VCE (sat)
B
C
(400Ω)
E