83
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)
Application : Switching Regulator and General Purpose
Symbol
V
CBO
VCEO
VEBO
IC
IB
PC
Tj
T
stg
2SC4020
900
800
7
3(
Pulse6)
1.5
50(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
■
Absolute maximum ratings
■
Electrical Characteristics
Symbol
I
CBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
2SC4020
100
max
100max
800min
10to30
0.5
max
1.2max
6typ
40typ
Unit
µ
A
µ
A
V
V
V
MHz
pF
Conditions
V
CB=800V
V
EB=7V
I
C=10mA
V
CE=4V, IC=0.7A
I
C=0.7A, IB=0.14A
I
C=0.7A, IB=0.14A
V
CE=12V, IE=–0.3A
V
CB=10V, f=1MHz
2SC4020
(Ta=25°C)
(Ta=25°C)
IC–VCE Characteristics
(Typical)
ton•tstg•tf–IC Characteristics
(Typical)
θj-a
–
t Characteristics
IC–VBE Temperature Characteristics
(Typical)
VCE(sat),VBE(sat)–IC Temperature Characteristics (Typical)
Pc–Ta Derating
Reverse Bias Safe Operating Area
Safe Operating Area (Single Pulse)
0.03
0.1
0.05
150.5
0
2
1
Collector-Emitter Saturation Voltage VCE(sat)(V)
Base-Emitter Saturation Voltage VBE(sat)(V)
Collector Current IC(A)
VBE(sat)
VCE(sat)
hFE–IC Characteristics
(Typical)
0.1 10.5 3
0.2
0.5
5
6
1
Switching Time ton•tstg•tf( µs)
Collector Current IC(A)
tstg
ton
tf
VCC 250V
IC:IB1:–IB2=2:0.3:1 Const.
0.3
1
5
0.5
1 10 100 1000 2000
Time t(ms)
Transient Thermal Resistance θj-a(˚C/W)
50
40
30
20
10
2
0
0 25 50 75 100 125 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation PC(W)
With Infinite heatsink
Without Heatsink
100 50050 1000
1
0.5
0.1
10
5
Collector-Emitter Voltage VCE(V)
Collector Current IC(A)
Without Heatsink
Natural Cooling
L=3mH
IB2=–1.0A
Duty:less than 1%
50 100 500 1000
1
0.5
0.1
10
5
Collector-Emitter Voltage VCE(V)
Collector Current IC(A)
Without Heatsink
Natural Cooling
100µs
(IC/IB=5)
0.02 0.10.05 1 30.5
2
5
10
50
Collector Current IC(A)
DC Current Gain hFE
(VCE=4V)
0
3
1
2
0 1.20.4 0.6 0.8 1.00.2
Base-Emittor Voltage VBE(V)
Collector Current IC(A)
(VCE=4V)
125˚C (Case Temp)
25˚C (Case Temp)
–30˚C (Case Temp)
125˚C
25˚C
–30˚C
0
0
2
1
3
2134
Collector-Emitter Voltage V
CE(V)
Collector Current IC(A)
300mA
400mA
500mA
140mA
200mA
100mA
60mA
I
B
=20mA
■Typical Switching Characteristics (Common Emitter)
V
CC
(V)
250
RL
(Ω)
357
I
C
(A)
0.7
V
BB2
(V)
–5
I
B2
(A)
–0.35
t
on
(µs)
1
max
tstg
(µs)
5
max
tf
(µs)
1
max
IB1
(A)
0.1
VBB1
(V)
10
External Dimensions MT-25(TO220)
BE
2.5 2.5
C
16.0
±0.7
12.0min
4.0max
8.8
±0.2
1.35
0.65
+0.2
-0.1
10.2
±0.2
ø3.75
±0.2
3.0
±0.2
4.8
±0.2
1.4
2.0
±0.1
a
b
Weight : Approx 2.6g
a. Type No.
b. Lot No.