Sanken Electric Co 2SC3858 Datasheet

80

Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1494)

Application : Audio and General Purpose

Symbol
V

CBO

VCEO
VEBO
IC
IB
PC
Tj
T

stg

2SC3858

200
200

6

17

5

200(Tc=25°C)

150

–55 to +150

Unit

V
V
V
A
A

W
°C
°C

■

Absolute maximum ratings

■

Electrical Characteristics

Symbol

I

CBO

IEBO
V(BR)CEO
hFE
VCE(sat)
fT
COB

2SC3858

100

max

100max
200min

50min∗

2.5

max

20typ

300typ

Unit

µ

A

µ

A

V

V

MHz

pF

Conditions

V

CB=200V

V

EB=6V

I

C=50mA

V

CE=4V, IC=8A

I

C=10A, IB=1A

V

CE=12V, IE=–1A

V

CB=10V, f=1MHz

2SC3858

(Ta=25°C)

(Ta=25°C)

IC–VCE Characteristics

(Typical)

hFE–IC Characteristics

(Typical)

hFE–IC

Temperature Characteristics (Typical)

θj-a

–

t Characteristics

IC–VBE Temperature Characteristics

(Typical)

VCE(sat)–IB Characteristics

(Typical)

Pc–Ta Derating

Safe Operating Area (Single Pulse)

fT–IE Characteristics

(Typical)

0

3

2

1

0123

Base Current I

B(A)

Collector-Emitter Saturation Voltage VCE(sat)(V)

IC =15A

10A

5A

Collector Current IC(A)

0

15

17

10

5

021

Base-Emittor Voltage VBE(V)

(V

CE=4V)

125˚C (Case Temp)

25˚C

–30˚C (Case Temp)

1 10 100 1000 2000

Time t(ms)

0.1

1

2

0.5

Transient Thermal Resistance θj-a(˚C/W)

200

160

120

80

40

5
0

0 25 50 75 100 125 150

Ambient Temperature Ta(˚C)

Maximum Power Dissipation PC(W)

With Infinite heatsink

Without Heatsink

Collector-Emitter Voltage VCE(V)

Collector Current IC(A)

2 10 100 300

0.1

1

0.5

10

50

5

3ms

Without Heatsink

Natural Cooling

DC

100ms

20ms

10ms

0.02 0.1 10.5 17105

20

50

100

300

Collector Current IC(A)

DC Current Gain hFE

(VCE=4V)

Typ

0

0

5

10

17

15

2134

Collector-Emitter Voltage V

CE(V)

Collector Current IC(A)

500mA

700mA

1A

300mA

200mA

50mA

I

B

=20mA

1.5A

(VCE=4V)

0.02 0.5 1 5 100.1 17
Collector Current I

C(A)

DC Current Gain hFE

125˚C

25˚C

–30˚C

10

50

100

200

–0.02 –0.1 –1 –10

0

10

20

30

Cut-off Frequency fT(MHZ)

(VCE=12V)

Emitter Current IE(A)

Typ

100mA

■Typical Switching Characteristics (Common Emitter)

V

CC

(V)
40

R

L

(Ω)

4

I

C

(A)

10

V

BB2

(V)
–5

I

B2

(A)
–1

t

on

(µs)

0.5typ

t

stg

(µs)

1.8typ

t

f

(µs)

0.6typ

I

B1

(A)

1

VBB1

(V)
10

External Dimensions MT-200

Weight : Approx 18.4g
a. Type No.
b. Lot No.

∗h

FE Rank Y(50 to 100), P(70 to 140), G(90 to 180)

±0.1

2-ø3.2

±0.3

21.4

4.0max

20.0min

±0.1

5.45

±0.3

36.4

±0.2

24.4

a
b

BE

C

±0.2

6.0

2.1

9

7

2

3

+0.2

1.05

-0.1

±0.1

5.45

0.65

+0.2

-0.1

+0.3

3.0

-0.1