Sanken Electric Co 2SC3851A Datasheet
76
2SC3851/3851A
IC–VCE Characteristics
(Typical)
hFE–IC Characteristics
(Typical)
hFE–IC
Temperature Characteristics (Typical)
θj-a
–
t Characteristics
IC–VBE Temperature Characteristics
(Typical)
VCE(sat)–IB Characteristics
(Typical)
Pc–Ta Derating
0
0
1
2
3
4
21 3456
Collector-Emitter Voltage V
CE(V)
Collector Current IC(A)
60mA
I
B
=70mA
Safe Operating Area (Single Pulse)
fT–IE Characteristics
(Typical)
50mA
40mA
30mA
20mA
10mA
5mA
30
20
10
0
0 50 100 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation PC(W)
With Infinite heatsink
Without Heatsink
0
1.0
0.5
0.005
0.01 0.10.05 10.5
Base Current IB(A)
Collector-Emitter Saturation Voltage VCE(sat)(V)
I
C
=1A
2A
3A
0.01 0.1 0.5 1 4
20
50
100
500
Collector Current IC(A)
DC Current Gain hFE
(VCE=4V)
Typ
0.5
1
5
1 10 100 1000
Time t(ms)
Transient Thermal Resistance θj-a(˚C/W)
10
5035 80
0.05
0.1
1
0.5
10
5
Collector-Emitter Voltage V
CE(V)
Collector Current IC(A)
Without Heatsink
Natural Cooling
DC
100ms
10ms
1ms
(VCE=4V)
0.01 0.10.05 10.5 4
20
50
100
500
Collector Current I
C(A)
DC Current Gain hFE
25˚C
–30˚C
125˚C
0
4
2
3
1
0 1.21.00.5
Base-Emittor Voltage VBE(V)
Collector Current IC(A)
(VCE=4V)
125˚C (Case Temp)
25˚C (Case Temp)
–30˚C (Case Temp)
–0.005 –0.1 –0.5 –1 –4
20
10
0
30
40
Cut-off Frequency fT(MHZ)
(VCE=12V)
Emitter Current IE(A)
Typ
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1488/A)
Application : Audio and PPC High Voltage Power Supply, and General Purpose
■Typical Switching Characteristics (Common Emitter)
V
CC
(V)
12
R
L
(Ω)
6
I
C
(A)
2
V
BB2
(V)
–5
I
B2
(mA)
–200
t
on
(µs)
0.2typ
t
stg
(µs)
1typ
t
f
(µs)
0.3typ
I
B1
(mA)
200
VBB1
(V)
10
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
T
stg
6
4
1
25(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
■
Absolute maximum ratings
■
Electrical Characteristics
2SC3851
80
60
min
Unit
µ
A
V
µ
A
V
V
MHz
pF
(Ta=25°C)
(Ta=25°C)
2SC3851A
100
80
2SC3851
80
60
2SC3851A
100
80
min
100max
40to320
0.5
max
15typ
60typ
External Dimensions FM20(TO220F)
ø3.3
±0.2
10.1
±0.2
4.0
±0.2
16.9
±0.3
13.0min
8.4
±0.2
0.8
±0.2
3.9
±0.2
2.542.54
1.35
±0.15
0.85
+0.2
-0.1
1.35
±0.15
2.2
±0.2
4.2
±0.2
2.8
c
0.5
2.4
±0.2
0.45
+0.2
-0.1
BEC
a
b
Weight : Approx 2.0g
a. Type No.
b. Lot No.
100max
Conditions
V
CB=
V
EB=6V
I
C=25mA
V
CE=4V, IC=1A
I
C=2A, IB=0.2A
V
CE=12V, IE=–0.2A
V
CB=10V, f=1MHz
Symbol
I
CBO
IEBO
V(BR)CEO
hFE
VCE(sat)
fT
COB
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