Sanken Electric Co 2SC3830 Datasheet
70
Silicon NPN Triple Diffused Planar Transistor
(High Voltage and High Speed Switching Transistor)
Application : Switching Regulator and General Purpose
Symbol
V
CBO
VCEO
VEBO
IC
IB
PC
Tj
T
stg
2SC3830
600
500
10
6(
Pulse12)
2
50(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
■
Absolute maximum ratings
■
Electrical Characteristics
Symbol
I
CBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
2SC3830
1
max
100max
500min
10to30
0.5
max
1.3max
8typ
45typ
Unit
mA
µ
A
V
V
V
MHz
pF
Conditions
V
CB=600V
V
EB=10V
I
C=25mA
V
CE=4V, IC=2A
I
C=2A, IB=0.4A
I
C=2A, IB=0.4A
V
CE=12V, IE=–0.5A
V
CB=10V, f=1MHz
2SC3830
(Ta=25°C) (Ta=25°C)
IC–VCE Characteristics
(Typical)
hFE–IC Characteristics
(Typical)
ton•tstg•tf–IC Characteristics
(Typical)
θj-a
–
t Characteristics
IC–VBE Temperature Characteristics
(Typical)
VCE(sat),VBE(sat)–IC Temperature Characteristics (Typical)
Pc–Ta Derating
Reverse Bias Safe Operating Area
Safe Operating Area (Single Pulse)
0
0
2
1
3
4
5
6
2134
Collector-Emitter Voltage V
CE(V)
Collector Current IC(A)
800mA
600mA
400mA
300mA
200mA
1A
I
B
=100mA
0.02 0.10.05 1 50.5
0
2
1
Collector-Emitter Saturation Voltage VCE(sat)(V)
Base-Emitter Saturation Voltage VBE(sat)(V)
(IC/IB=5)
Collector Current I
C(A)
VBE(sat)
125˚C (Case Temp)
25˚C (Case Temp)
–55˚C (Case Temp)
25˚C
–55˚C
VCE(sat)
1
2
5
˚
C
(
C
a
s
e
T
e
m
p
)
0.2 10.5 65
0.1
0.5
5
7
1
Switching Time ton•tstg•tf( µs)
Collector Current IC(A)
tstg
ton
tf
VCC 200V
IC :IB1:IB2=10:1:–2
0.3
1
4
0.5
1 10 100 1000
Time t(ms)
Transient Thermal Resistance θj-a(˚C/W)
50
40
30
20
10
2
0
0 25 50 75 100 125 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation PC(W)
With Infinite heatsink
Without Heatsink
10050
1
0.5
0.02
0.1
0.05
10
20
5
Collector-Emitter Voltage V
CE(V)
Collector Current IC(A)
10 507 100
500 600
500 600
0.05
0.02
1
0.5
0.1
10
20
5
Collector-Emitter Voltage VCE(V)
Collector Current IC(A)
Without Heatsink
Natural Cooling
100µs
10ms
1ms
DC
0
6
2
1
4
3
5
0 1.41.20.4 0.6 0.8 1.00.2
Base-Emittor Voltage V
BE(V)
Collector Current IC(A)
(VCE=4V)
125˚C (Case Temp)
–55˚C (Case Temp)
0.02 0.10.05 1 650.5
5
10
50
Collector Current IC(A)
DC Current Gain hFE
(VCE=4V)
125˚C
25˚C
–55˚C
25˚C (Case Temp)
Without Heatsink
Natural Cooling
L=3mH
IB2=–0.5A
Duty:less than 1%
■Typical Switching Characteristics (Common Emitter)
VCC
(V)
200
RL
(Ω)
100
I
C
(A)
2
V
BB2
(V)
–5
I
B2
(A)
–0.4
t
on
(µs)
1
max
tstg
(µs)
4.5
max
tf
(µs)
0.5
max
IB1
(A)
0.2
VBB1
(V)
10
External Dimensions MT-25(TO220)
BE
2.5 2.5
C
16.0
±0.7
12.0min
4.0max
8.8
±0.2
1.35
0.65
+0.2
-0.1
10.2
±0.2
ø3.75
±0.2
3.0
±0.2
4.8
±0.2
1.4
2.0
±0.1
a
b
Weight : Approx 2.6g
a. Type No.
b. Lot No.
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