Sanken Electric Co 2SC3284 Datasheet

65

Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1303)

Application : Audio and General Purpose

Symbol V

CBO

VCEO VEBO IC IB PC Tj T

stg

2SC3284

150 150

5

14

3

125(Tc=25°C)

150

–55 to +150

Unit

V V V A A

W °C °C

■

Absolute maximum ratings

■

Electrical Characteristics

Symbol

I

CBO

IEBO V(BR)CEO hFE VCE(sat) fT COB

2SC3284

100

max

100max 150min

50min∗

2.0

max

60typ

200typ

Unit

µ

A

µ

A

V

V

MHz

pF

Conditions

V

CB=150V

V

EB=5V

I

C=25mA

V

CE=4V, IC=5A

I

C=5A, IB=0.5A

V

CE=12V, IE=–2A

V

CB=10V, f=1MHz

LAPT 2SC3284

(Ta=25°C)

(Ta=25°C)

IC–VCE Characteristics

(Typical)

hFE–IC Characteristics

(Typical)

hFE–IC

Temperature Characteristics (Typical)

θj-a

–

t Characteristics

IC–VBE Temperature Characteristics

(Typical)

VCE(sat)–IB Characteristics

(Typical)

Pc–Ta Derating

Safe Operating Area (Single Pulse)

fT–IE Characteristics

(Typical)

0

3

2

1

0 0.2 0.4 0.6 1.00.8

Base Current I

B(A)

Collector-Emitter Saturation Voltage VCE(sat)(V)

IC =10A

5A

0

14

10

5

021

Base-Emittor Voltage V

BE(V)

Collector Current IC(A)

(VCE=4V)

125˚C (Case Temp)

25˚C

–30˚C (Case Temp)

0.1

1

3

0.5

1 10 100 1000 2000

Time t(ms)

Transient Thermal Resistance θj-a(˚C/W)

130

100

50

3.5 0

0 25 50 75 100 125 150

Ambient Temperature Ta(˚C)

Maximum Power Dissipation PC(W)

With Infinite heatsink

Without Heatsink

3 10 100 200

0.2

1

0.5

10

40

5

Collector-Emitter Voltage V

CE(V)

Collector Current IC(A)

10ms

100ms

1ms

DC

Without Heatsink

Natural Cooling

0

0

4

14

12

8

2134

Collector-Emitter Voltage V

CE(V)

Collector Current IC(A)

400mA

500mA

600mA

300mA

200mA

150mA

100mA

50mA

I

B

=20mA

750mA

(VCE=4V)

0.02 0.5 51

20

50

200

100

0.1 1014 Collector Current I

C(A)

DC Current Gain hFE

125˚C

25˚C

–30˚C

–0.02 –0.1 –1 –10

0

20

40

60

80

Cut-off Frequency fT(MHZ)

(VCE=12V)

Emitter Current I

E(A)

Typ

0.02 0.1 0.5 1 5 1410

20

50

100

200

Collector Current I

C(A)

DC Current Gain hFE

(VCE=4V)

Typ

■Typical Switching Characteristics (Common Emitter)

V

CC

(V) 60

R

L

(Ω)

12

I

C

(A)

5

V

BB2

(V) –5

I

B2

(A)

–0.5

t

on

(µs)

0.2typ

t

stg

(µs)

1.5typ

t

f

(µs)

0.35typ

I

B1

(A)

0.5

VBB1

(V) 10

External Dimensions MT-100(TO3P)

15.6

±0.4

9.6

19.9

±0.3

4.0 2.0

5.0

±0.2

1.8

ø3.2

±0.1

2

3

1.05

+0.2

-0.1

20.0min

4.0max

BE

5.45

±0.1

5.45

±0.1

C

4.8

±0.2

0.65

+0.2

-0.1

1.4

2.0

±0.1

a b

Weight : Approx 6.0g a. Type No. b. Lot No.

∗h

FE Rank O(50 to 100), P(70 to 140), Y(90 to 180)

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