IC–VCE Characteristics
(Typical)
hFE–IC Characteristics
(Typical)
hFE–IC
Temperature Characteristics (Typical)
θj-a
–
t Characteristics
IC–VBE Temperature Characteristics
(Typical)
VCE(sat)–IB Characteristics
(Typical)
Pc–Ta Derating
0
0
1
2
2134
Collector-Emitter Voltage V
CE(V)
Collector Current IC(A)
I
B
=200mA
I
B
=20mA/stop
Safe Operating Area (Single Pulse)
fT–IE Characteristics
(Typical)
0
3
2
1
0 0.1 0.2 0.3
Base Current I
B(A)
Collector-Emitter Saturation Voltage VCE(sat)(V)
IC =1A
2A
3 10 1000 2000100
10
50
100
200
Collector Current IC(mA)
DC Current Gain hFE
(VCE=4V)
Typ
0.2
0.5
1
5
1 10 100
1000 2000
Time t(ms)
Transient Thermal Resistance θj-a(˚C/W)
10
1002 500
0.02
0.1
1
0.5
0.05
10
5
Collector-Emitter Voltage V
CE(V)
Collector Current IC(A)
Without Heatsink
Natural Cooling
DC
20ms
5ms
1ms
40
30
20
10
2
0
0 25 50 75 100 125 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation PC(W)
50x50x2
100x100x2
150x150x2
With Infinite heatsink
Without Heatsink
0
2
1
0 1.0
0.80.60.40.2
Base-Emittor Voltage VBE(V)
Collector Current IC(A)
(VCE=4V)
125˚C (Case Temp)
25˚C (Case Temp)
–30˚C (Case Temp)
(VCE=4V)
3 5 10 50 100 500
1000 2000
10
50
200
100
Collector Current I
C(mA)
DC Current Gain hFE
25˚C
–30˚C
125˚C
–0.003 –0.01 –0.05
–0.1 –0.5 –1
10
0
20
Cut-off Frequency fT(MHZ)
(VCE=12V)
Emitter Current IE(A)
Typ
Natural Cooling
Silicone Grease
Heatsink: Aluminum
in mm
Silicon NPN Triple Diffused Planar Transistor
Application : Series Regulator, Switch, and General Purpose
Symbol
V
CBO
VCEO
VEBO
IC
IB
PC
Tj
T
stg
2SC2023
300
300
6
2
0.2
40(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
■
Absolute maximum ratings
■
Electrical Characteristics
Symbol
I
CBO
IEBO
V(BR)CEO
hFE
VCE(sat)
fT
COB
2SC2023
1.0
max
1.0max
300min
30min
1.0max
10typ
75typ
Unit
mA
mA
V
V
MHz
pF
Conditions
V
CB=300V
V
EB=6V
I
C=25mA
V
CE=4V, IC=0.5A
I
C=1.0A, IB=0.2A
V
CE=12A, IE=–0.2A
V
CB=10V, f=1MHz
2SC2023
(Ta=25°C)
(Ta=25°C)
External Dimensions MT-25(TO220)
BE
2.5 2.5
C
16.0
±0.7
12.0min
4.0max
8.8
±0.2
1.35
0.65
+0.2
-0.1
10.2
±0.2
ø3.75
±0.2
3.0
±0.2
4.8
±0.2
1.4
2.0
±0.1
a
b
■Typical Switching Characteristics (Common Emitter)
V
CC
(V)
100
R
L
(Ω)
100
IC
(A)
1.0
VB2
(V)
–5
I
B2
(mA)
–200
t
on
(µs)
0.3typ
t
stg
(µs)
4.0typ
t
f
(µs)
1.0typ
I
B1
(mA)
100
Weight : Approx 2.6g
a. Type No.
b. Lot No.